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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

反应溅射法制备铝掺杂氧化锆薄膜及其热稳定性的研究

马春雨1, 李智2, 张庆瑜1   

  1. (1. 大连理工大学三束材料改性国家重点实验室, 大连 116023; 2. 大连大学机械工程学院, 大连 116622)
  • 收稿日期:2006-12-19 修回日期:2007-03-17 出版日期:2007-11-20 网络出版日期:2007-11-20

Thermal Stability of Al-doped ZrO2 Films Prepared by Reactive RF Magnetron Sputtering

MA Chun-Yu1, LI Zhi2, ZHANG Qing-Yu1   

  1. (1. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beam,Dalian University of Technology, Dalian 116024, China; 2. Department of Mechanical Engineering, Dalian University, Dalian 116622, China)
  • Received:2006-12-19 Revised:2007-03-17 Published:2007-11-20 Online:2007-11-20

PDF (PC)

1847

被引次数

7

摘要： 采用反应射频磁控溅射在Si(100)基片上制备了不同微结构的铝掺杂氧化锆薄膜. 利用高分辨透射电子显微镜、X射线衍射仪和原子力显微镜研究了退火温度对铝掺杂氧化锆薄膜热学稳定性、界面稳定性和表面粗糙度的影响, 探讨了铝掺杂氧化锆薄膜的I-V特性与薄膜的微观状态之间的关系. 研究结果显示: 在铝掺杂氧化锆薄膜中掺入不同量的Al对薄膜的微结构有较大影响, 随着薄膜中Al/Zr原子含量比的增大, 薄膜微结构经历从a-ZrO2(未掺杂)到t-(Zr,Al)O2相和c-(Zr,Al)O2相(Al/Zr=1/4)再到a-(Zr,Al)O2(Al/Zr=4/5)的变化; 与纯ZrO2薄膜相比, Al掺杂氧化锆(Al/Zr=4/5)薄膜的结晶化温度明显提高, 薄膜热学稳定性得到改善.

关键词: 薄膜物理学, 铝掺杂氧化锆薄膜, 磁控溅射, 热稳定性

Abstract: Al-doped ZrO2 films with different microstructures were deposited on Si (100) substrates by using reactive RF magnetron sputtering process with metallic Zr and Al as targets in an argon-oxygen atmosphere. The films were characterized with high-resolution transmission electron microscope (HRTEM), X-ray diffraction (XRD), and atomic force microscope (AFM) to investigate variety of the thermal stability, the interfacial stability and the surface roughness of the films with different annealing temperatures. The influence of the microstructures of Al-doped ZrO2 thin films on their electrical I-V characteristics was also discussed. The results show that the atomic content of Al in films has a significant influence on the microstructures, upon increasing the atomic content ratio of Al/Zr, the structure transition of the films is a-ZrO2 (pure)→t-(Zr,Al)O2 and c-(Zr,Al)O2 (Al/Zr=1/4)→a-(Zr,Al)O2(Al/Zr=4/5). Al-doped ZrO2 thin films with Al/Zr atomic ratio of 4/5 has the increase in the crystallization temperature compared to a pure ZrO2 film, so the thermal stability of the films is improved.

Key words: thin film physics, Al-doped ZrO2 thin film, magnetron sputtering, thermal stability

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