无机材料学报

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TeO2晶体位错腐蚀形貌与晶体对称性

方雅珂; 桑文斌; 闵嘉华   

  1. 海大学材料学院电子信息材料系 上海 201800
  • 收稿日期:2003-09-22 修回日期:2003-11-05 出版日期:2004-11-20 网络出版日期:2004-11-20

Etching Morphology and Symmetry of TeO2 Crystal

FANG Ya-Ke; SANG Wen-Bin; MIN Jia-Hua   

  1. Department of Electronic Information Materials; Shanghai University; Shanghai 201800; China
  • Received:2003-09-22 Revised:2003-11-05 Published:2004-11-20 Online:2004-11-20

摘要: 用化学腐蚀的方法研究TeO2晶体(110)面和(001)面位错蚀坑的形貌,结合晶面极图,并运用对称群理论进行分析论证,理论分析与实验结果相一致.实验结果同时显示,TeO2晶体位错腐蚀坑面由{110}面族构成,即{110}面族是晶体的习性面.

关键词: TeO2晶体, 腐蚀, 位错, 对称性

Abstract: The etching morphologies of TeO2 crystal on (110) and (001) faces were observed by means of chemical etching and analyzed with the theory of symmetry group. The morphologies of etch pits are very special compared with the tetragonal system crystal with 422 point group. The morphologies of etch pits by theoretical analysis are in conformity with the experiment. It shows that the patterns of etch pits consist of {110} planes. It is clear that the habitual plane of TeO2 crystal is {110} plane.

Key words: TeO2 crystal, etching, dislocation, symmetry

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