高级检索
无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

在多工位炉上CeO2:Bi12SiO20单晶生长的研究(Ⅰ)──地面生长实验部分

周燕飞; 唐连安; 朱骏雄   

  1. 中国科学院上海硅酸盐研究所 上海 200050
  • 收稿日期:2001-02-16 修回日期:2001-03-21 出版日期:2002-03-20 网络出版日期:2002-03-20

Growth of CeO2:Bi12SiO20 Crystals in the Multi-Position Furnace

ZHOU Yan-Fei; TANG Lian-An; ZHU Jun-Xiong   

  1. Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China
  • Received:2001-02-16 Revised:2001-03-21 Published:2002-03-20 Online:2002-03-20

PDF (PC)

832

摘要： Ｂｉ１２ＳｉＯ２０是一种优质的光折变晶体．但在地面生长掺Ｃｅ：ＢＳＯ晶体时遇到的主要问题是分凝系数远远＜１，导致晶体组分不均匀．本文采用在空间生长掺Ｃｅ：ＢＳＯ晶体的多工位炉进行地面晶体生长，测试了ＣｅＯ２浓度分布和掺Ｃｅ：ＢＳＯ晶体的透过率，以便同空间生长掺Ｃｅ：ＢＳＯ晶体进行比较．

关键词: 掺铈硅酸铋（Ce:BSO）, 晶体生长, 多工位炉

Abstract: Bi12SiO20 single crystals exhibit excellent photorefractive behavior. The main problem in growing doped Ce:BSO crystals on earth is low segregation coefficients that result in a poor chemical homogeneity of the crystals. In our experiments, Ce:BSO crystals were grown on earth in the multi-position furnace especially designed for growing single crystals in space. The dopant distribution and transmission spectra of Ce:BSO grown on earth were measured and compared with that of Ce:BSO crystals grown in space.

Key words: doped cerium bismuth silicon oxides （Ce:BSO）, crystal growth, multi-position furnace

中图分类号: