氧化铁忆阻器中缺陷态诱导的模拟型阻变及突触双脉冲易化特性

doi:10.15541/jim20220721

无机材料学报 ›› 2023, Vol. 38 ›› Issue (4): 437-444.DOI: 10.15541/jim20220721

• 专栏：神经形态材料与器件(特邀编辑：万青) • 上一篇下一篇

氧化铁忆阻器中缺陷态诱导的模拟型阻变及突触双脉冲易化特性

王彤宇¹(), 冉皓丰¹, 周广东¹^,²()

1.西南大学人工智能学院, 重庆 400715
2.西南大学类脑计算与智能控制重庆市重点实验室, 重庆 400715

收稿日期:2022-11-30 修回日期:2023-01-31 出版日期:2023-04-20 网络出版日期:2023-02-07
通讯作者: 周广东, 教授. E-mail: zhougd@swu.edu.cn
作者简介:王彤宇(2001-), 女. E-mail: 2278117615@qq.com
基金资助:
中央高校基本科研业务费专项资金(SWU020019);国家自然科学基金联合基金(U20A20227);重庆市自然科学基金(cstc2020jcyj-msxm X0648)

Defect-induced Analogue Resistive Switching Behavior in FeO_x-based Memristor and Synaptic Paired-pulse Facilitation Feature

WANG Tongyu¹(), RAN Haofeng¹, ZHOU Guangdong¹^,²()

1. College of Artificial Intelligence, Southwest University, Chongqing 400715, China
2. Chongqing Key Laboratory of Brain-like Computing and Intelligent Control, Southwest University, Chongqing 400715, China

Received:2022-11-30 Revised:2023-01-31 Published:2023-04-20 Online:2023-02-07
Contact: ZHOU Guangdong, professor. E-mail: zhougd@swu.edu.cn
About author:WANG Tongyu (2001-), female. E-mail: 2278117615@qq.com
Supported by:
Fundamental Research Funds for the Central Universities(SWU020019);The Joint Funds of the National Natural Science Foundation of China(U20A20227);Natural Science Foundation of Chongqing(cstc2020jcyj-msxm X0648)

摘要/Abstract

摘要：

模拟型阻变突触特性能够为神经形态计算提供高的计算精度并避免计算过程中带来的电导卡滞、跃变以及失效等问题。模拟生物突触在刺激脉冲下的行为, 能够更好地揭示电子器件的仿生特性机理并为高性能神经形态计算提供支撑。突触双脉冲易化是生物突触的重要特性, 反映了在外界刺激作用下的易化和适应性过程, 对揭示神经元的工作机制至关重要。为了构建突触双脉冲易化的模拟型忆阻器件, 本研究通过器件的能带结构设计及氧空位缺陷态的调控, 利用射频磁控溅射法制备了一种结构为Ag/FeO_x/ITO的忆阻器。电学测试结果表明, 该器件具有优异的渐进递增的非线性阻变特性, 即模拟型阻变特性。在I-V循环扫描3000次范围内, 这种器件均表现出模拟型阻变特性, 可提供稳定的、可分离的16个电导状态, 且在10⁴s内维持良好, 说明这些电导状态是非易失性的, 这主要归功于电子在氧空位缺陷态中的捕获与去捕获以及在势垒间隧穿行为。但是, 在低电场强度情况下, 捕获的热电子有可能会跃迁出浅陷阱能级, 而呈现出易失性。根据这种器件的易失性和非易失性共存特性, 通过调制电压脉冲宽度、幅度, 器件能够表现出很好的突触双脉冲易化特性, 显示出该类型器件在神经形态计算中的潜力和优势。

关键词: 忆阻器, 氧化铁, 缺陷态, 突触双脉冲易化

Abstract:

A memristor with analogue resistive switching (RS) memory behaviors could provide enough conductance states for high-efficiency neuromorphic computing because this type RS memory feature can avoid conductance clamping, steeply change, and computing invalidation. Simulating the behavior of biological synapses under stimulus pulse can better reveal the bionic characteristic mechanism of electronic devices and provide support for high performance neuromorphic computation. Synaptic paired-pulse facilitation (PPF) is an important characteristic of biological synapses, reflecting the facilitation and adaptation process under external stimuli, which is crucial to reveal the working mechanism of neurons. A memristor with the structure of the Ag/FeO_x/ITO was prepared by RF magnetron sputtering, which was designed by energy band engineering for the PPF demonstration. Experimental measurement of the electric properties illustrates that the developed memristor displays an excellent asymptotic nonlinear resistance switching behaviors, which is so called analogue RS memory behavior. Importantly, this developed memristor presents this analogue RS memory behavior during 3000 I-V sweepings, provides dissociable 16 conductance states that could be well maintained for 10⁴s, illustrating that these available conductance states are nonvolatile. Based on the energy band structure and oxygen vacancy (V_O) defects, a physical mechanism, which involved trap sites softly filled by the injection electron, electron tunneling between the potential barrier built by the contact of Ag/FeO_x and FeO_x/ITO, and the V_O migration that accompanied a volatile feature to some extent, is proposed to comprehend the observed analogue RS memory behaviors. According to this mechanism, a typical PPF feature is obtained after modulating the voltage pulse width and amplitude. The observed analogue RS memory behaviors and PPF behaviors show a promising potential and advantage in neuromorphic computing.

Key words: memristor, iron oxide, defect state, synaptic double pulse facilitation

中图分类号:

TQ714

王彤宇, 冉皓丰, 周广东. 氧化铁忆阻器中缺陷态诱导的模拟型阻变及突触双脉冲易化特性[J]. 无机材料学报, 2023, 38(4): 437-444.

WANG Tongyu, RAN Haofeng, ZHOU Guangdong. Defect-induced Analogue Resistive Switching Behavior in FeO_x-based Memristor and Synaptic Paired-pulse Facilitation Feature[J]. Journal of Inorganic Materials, 2023, 38(4): 437-444.

图/表 5

图1 Ag/FeOx/ITO忆阻器结构及表征

Fig. 1 Structure and characterization of Ag/FeOx/ITO memristors (a) Schematic diagram of structure of Ag/FeOx/ITO memristors and corresponding SEM section; (b) XRD patterns of FeOx resistance functional layer; (c) XPS spectra of the core-level of the Fe2p; (d) XPS spectra of the core-level of the O1s

图2 Ag/FeOx/ITO忆阻器忆阻特性测试结果

Fig. 2 Results of memristor characteristics of Ag/FeOx/ITO memristors FeOx memristors with different thicknesses of functional layerobtained by changing FeOx growth parameters; (a) Memristor characteristic curves of Ag/FeOx/ITO memristor grown at 100 W/1 h and 80 W/35 min; (b) I-V curve of Ag/FeOx/ITO memristor grown at 100 W/2 h; (c, d) Analog resistance characteristic curve phenomena of memristor in the negative voltage region (c) and positive voltage region (d); (e) I-V curves of 100 different devices under the same conditions; (f) Regulation of voltage sweep rate on analog resistive characteristics; (g) Regulation of analog resistance characteristics by different sweep voltage amplitudes; (h) Current-to-time (I-t) curves of the device in different conductive states at the read voltage of 0.2 V; Colorful figures are available on website

图3 多电导态测试及生物突触模拟

Fig. 3 Multiconductivity testing and biological synaptic simulation (a) Multi-current levels after operating the Ag/FeOx/ITO memristor to different conductance states under a reading voltage of 0.2 V with precision exceeding 4 bits for the FeOx-based memristor; (b) PPF pulse test schematic; (c) PPF pulse test results; (d) PPF versus interval of Ag/FeOx/ITO memristor

图4 Ag/FeOx/ITO忆阻器物理机制拟合结果

Fig. 4 Results of fitting the physical mechanism of Ag/FeOx/ITO memristors (a) Using the Fowler-Nordheim tunneling mechanism; (b) Using the Schottky emission tunneling mechanism; (c) Using the Ohmic current mechanism; (d) Using the Frenkel-Poole tunneling mechanism

图5 基于陷阱能级隧穿构建的物理模型

Fig. 5 Physical model constructed based on trap energy level tunneling (a) Electrons are injected from Ag electrode and filled with defect energy levels in FeOx; (b) Defect energy level in FeOx is filled and the device is converted to LRS; (c) Reverse voltage, electrons are injected from the ITO electrode and filled with defect energy levels; (d) Defect energy level is filled and the device transitions to LRS again

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氧化铁忆阻器中缺陷态诱导的模拟型阻变及突触双脉冲易化特性

Defect-induced Analogue Resistive Switching Behavior in FeO_x-based Memristor and Synaptic Paired-pulse Facilitation Feature

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氧化铁忆阻器中缺陷态诱导的模拟型阻变及突触双脉冲易化特性

Defect-induced Analogue Resistive Switching Behavior in FeOx-based Memristor and Synaptic Paired-pulse Facilitation Feature

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Defect-induced Analogue Resistive Switching Behavior in FeO_x-based Memristor and Synaptic Paired-pulse Facilitation Feature