4H-SiC高速同质外延研究

doi:10.3724/SP.J.1077.2012.11577

无机材料学报 ›› 2012, Vol. 27 ›› Issue (8): 785-789.DOI: 10.3724/SP.J.1077.2012.11577 CSTR: 32189.14.SP.J.1077.2012.11577

• 研究论文 • 下一篇

4H-SiC高速同质外延研究

朱明星^1,2, 石彪^1,2, 陈义¹, 刘学超¹, 施尔畏¹

(1. 中国科学院上海硅酸盐研究所, 上海201800; 2. 中国科学院研究生院, 北京100049)

收稿日期:2011-09-09 修回日期:2011-11-28 出版日期:2012-08-20 网络出版日期:2012-07-09
作者简介:朱明星(1985-), 男, 博士研究生. E-mail: zhmx@student.sic.ac.cn

High-speed Homoepitaxial Growth of 4H-SiC

ZHU Ming-Xing^1,2, SHI Biao^1,2, CHEN Yi¹, LIU Xue-Chao¹, SHI Er-Wei¹

(1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China; 2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China)

Received:2011-09-09 Revised:2011-11-28 Published:2012-08-20 Online:2012-07-09
About author:ZHU Ming-Xing. E-mail: zhmx@student.sic.ac.cn

摘要/Abstract

摘要： 研究了生长温度为1400℃时4H-SiC同质外延膜的生长速率、表面形貌及缺陷. 拉曼表征并结合KOH腐蚀表明外延膜中未出现3C-SiC多晶, 为单一的4H-SiC晶型. 通过KOH腐蚀发现, 低生长速率和高C/Si比有利于衬底表面的基平面位错(BPDs)转变成露头刃位错(TEDs). 在高生长速率下, 外延膜的表面三角形缺陷和位错密度会显著增加. 通过引入界面层, 可以实现生长初期的平滑过渡, 极大地降低高生长速率下外延膜的缺陷密度.

关键词: 碳化硅, 同质外延, 结晶缺陷, 表面形貌缺陷

Abstract: Homoepitaxial growth of 4H-SiC at 1400℃ was explored. The growth rate, surface morphology and defects of the epi-layers were studied. Raman characterization combined with KOH etching indicated that the epi-layers were 4H-SiC single crystal without 3C-SiC polycrystalline. In addition, low growth rate and high C/Si ratio were beneficial to convert the basal plane dislocations (BPDs) in substrate surface to threading edge dislocations (TEDs) at the sub-epi interface. Furthermore, the low growth rate was also favorable to reduce the defects generated during the growth process. With the growth rate increasing, the surface triangle defects and dislocations of the epilayers significantly increased. Most of these defects and dislocations were considered to be generated at the sub-epi interface at the beginning of the growth. By optimizing the interface layer at initial stage, a smooth transition from surface etching to epi-layer deposition can be achieved and the surface morphological defects and crystal defects were greatly reduced at high growth rate.

Key words: silicon carbide, homoepitaxial growth, crystal defects, surface morphological defects

中图分类号:

TQ174

朱明星, 石彪, 陈义, 刘学超, 施尔畏. 4H-SiC高速同质外延研究[J]. 无机材料学报, 2012, 27(8): 785-789.

ZHU Ming-Xing, SHI Biao, CHEN Yi, LIU Xue-Chao, SHI Er-Wei. High-speed Homoepitaxial Growth of 4H-SiC[J]. Journal of Inorganic Materials, 2012, 27(8): 785-789.

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4H-SiC高速同质外延研究

High-speed Homoepitaxial Growth of 4H-SiC

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