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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

Mn-Mg共掺杂对钛酸锶钡薄膜介电性能的影响

周歧刚1,2, 翟继卫1, 姚熹1   

  1. 1. 同济大学功能材料研究所, 上海 200092; 2. 乐山师范学院物理与电子信息科学系, 四川乐山 614004
  • 收稿日期:2006-05-15 修回日期:2006-07-03 出版日期:2007-05-20 网络出版日期:2007-05-20

Influence of Mn-Mg Co-doping on the Dielectric Properties of Barium Strontiun
Titanate Thin Film

ZHOU Qi-Gang 1,2, ZHAI Ji-Wei 1, YAO Xi 1   

  1. 1. Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China; 2. Dept. of Physics & Electronic Information Science, Leshan Teacher’s College, Sichuan Leshan 614004, China
  • Received:2006-05-15 Revised:2006-07-03 Published:2007-05-20 Online:2007-05-20

PDF (PC)

1778

被引次数

19

摘要： 用溶胶-凝胶法在Pt/Ti/SiO 2/Si衬底上制备了系列Mn-Mg共掺杂的钛酸锶钡(Ba 0.25 Sr 0.75 TiO 3)薄膜. X射线衍射以及场发射扫描电镜分析表明: 薄膜为钙钛矿结构且无杂相生成, 薄膜表面晶粒均匀、无裂纹. 测试了不同浓度掺杂薄膜的介电性能, 掺杂浓度为1mol% 时, 薄膜的介电常数、损耗、可调性和漏电流密度分别为200、0.010、38%、1×10-5 A/cm 2. 性能改善后的薄膜材料可以用来制作微波可调器件.

关键词: BST薄膜, Mn－Mg共掺杂, 溶胶-胶方法, 介电性能

Abstract: Undoped and Mn-Mg co-doped barium strontiun titanate (Ba0.25Sr0.75TiO3) thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol-gel technique. X-ray diffraction (XRD) analysis and FE- SEM reveal that the films exhibite a pure perovskite phasestructure, uniform grain sizes and crack-fee. The dielectric constant, loss, tunability and leakage current density are 200, 0.010, 38%, 1×10 -5 A/cm 2, respectively, at a 1mol% Mn-Mg content. The improved BST thin films can be used for tunable microwave devices.

Key words: BST thin film, Mn-Mg co-doping, sol-gel, dielectric property

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