无机材料学报

• 研究论文 •    

鼓泡化学气相沉积法制备褶皱六方氮化硼薄膜

戴宗润1,2, 时志远1, 朱昱霖1,2, 何朋1,2, 于庆凯1,2   

  1. 1.中国科学院 上海微系统与信息技术研究所,上海 200050;
    2.中国科学院大学 材料科学与光电技术学院, 北京 100049
  • 收稿日期:2026-05-12 修回日期:2026-05-23
  • 通讯作者: 时志远, 副研究员. E-mail: shizhy@mail.sim.ac.cn; 于庆凯, 研究员. E-mail: qyu@mail.sim.ac.cn
  • 作者简介:戴宗润(2000-), 男, 硕士研究生. E-mail: daizongrun23@mails.ucas.ac.cn
  • 基金资助:
    国家自然科学基金(12104476)

Preparation of Wrinkled Hexagonal Boron Nitride Films by Bubbling Chemical Vapor Deposition

DAI Zongrun1,2, SHI Zhiyuan1, ZHU Yulin1,2, HE Peng1,2, YU Qingkai1,2   

  1. 1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2026-05-12 Revised:2026-05-23
  • Contact: SHI Zhiyuan, associate professor. E-mail: shizhy@mail.sim.ac.cn; YU Qingkai, professor. E-mail: qyu@mail.sim.ac.cn
  • About author:DAI Zongrun (2000–), male, Master candidate. E-mail: daizongrun23@mails.ucas.ac.cn
  • Supported by:
    National Natural Science Foundation of China (12104476)

摘要: 六方氮化硼(Hexagonal Boron Nitride, h-BN)在微电子器件封装与先进热管理等领域具有重要应用价值,但传统化学气相沉积技术受限于反应界面难以持续更新,高结晶度二维h-BN薄膜的低成本连续宏量制备仍面临挑战。为此,本研究旨在拓展鼓泡化学气相沉积技术,设计Fe-B或Fe-Cr-Ni-B反应熔体,通过持续通入氮气构建气-液反应空间,在动态更新的气泡表面或熔体内部促进h-BN薄膜持续生长。对于熔融Fe-B体系,制备了10层左右高结晶度、微结构丰富、耐高温还原/氧化气氛的h-BN薄膜。对于熔融Fe-Cr-Ni-B体系,通过引入Ni和Cr元素改善熔体对硼、氮的溶解能力,引导反应由气-液表面拓展至液相内部,制备出尺寸约1 μm、类洋葱状结构的h-BN微球。综上所述,本研究基于鼓泡化学气相沉积法,通过开发含硼合金熔融体系,为不同形态的h-BN宏量可控制备提供了一种新的技术途径。

关键词: 鼓泡化学气相沉积法, 六方氮化硼, 含硼合金, 微结构

Abstract: Hexagonal Boron Nitride (h-BN) has important value in fields such as microelectronic packaging and advanced thermal management. However, traditional chemical vapor deposition (CVD) technology is limited because the reaction interface is difficult to refresh continuously. The low-cost, continuous, and scalable production of highly crystalline 2D h-BN films still faces challenges. To address this, this study aims to expand bubbling chemical vapor deposition technology. We designed Fe-B or Fe-Cr-Ni-B reaction melts. A gas-liquid reaction space is constructed by continuously introducing nitrogen gas. This promotes the continuous growth of h-BN films on dynamically refreshing bubble surfaces or inside the melts. For the molten Fe-B system, h-BN films with about 10 layers were prepared. These films possess high crystallinity, rich microstructures, and resistance under high-temperature reducing/oxidizing atmospheres. For the molten Fe-Cr-Ni-B system, the introduction of Ni and Cr elements improves the solubility of B and N in the melt. This guides the reaction from the gas-liquid surface into the liquid bulk. We prepared onion-like h-BN microspheres with a size of about 1 μm. In summary, based on the bubbling chemical vapor deposition method, this study establishes boron-containing alloy melt systems. This approach provides a new technical path for the scalable and controllable preparation of h-BN with different morphologies.

Key words: bubbling chemical vapor deposition, h-BN, boron-containing alloy, microstructures

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