不同厚度四面体非晶碳薄膜的高通量制备及表征

doi:10.15541/jim20180027

无机材料学报 ›› 2018, Vol. 33 ›› Issue (11): 1173-1178.DOI: 10.15541/jim20180027

不同厚度四面体非晶碳薄膜的高通量制备及表征

魏菁^1,2, 李汉超^1,3, 柯培玲¹, 汪爱英¹

1. 中国科学院宁波材料技术与工程研究所, 中国科学院海洋新材料与应用技术重点实验室, 浙江省海洋材料与防护技术重点实验室, 宁波 315201;
2. 中国科学院大学, 北京 100049;
3. 上海科技大学物质科学与技术学院, 上海 201210

收稿日期:2018-01-16 修回日期:2018-03-09 出版日期:2018-11-16 网络出版日期:2018-10-20
作者简介:魏菁(1993-), 女, 博士研究生. E-mail: weijing@nimte.ac.cn
基金资助:
国家自然科学基金(51522106);浙江省重点研发计划(2017C01001);浙江省公益项目(2016C31121)

Characterization of Tetrahedral Amorphous Carbon Film with Various Thickness by High Through-put Method

WEI Jing^1,2, LI Han-Chao^1,3, KE Pei-Ling¹, WANG Ai-Ying¹

1. Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Key Laboratory of Marine Materials and Related Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;

2. University of Chinese Academy of Sciences, Beijing 100049, China;

3. Sohool of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China

Received:2018-01-16 Revised:2018-03-09 Published:2018-11-16 Online:2018-10-20
About author:WEI Jing. E-mail: weijing@nimte.ac.cn
Supported by:
National Natural Science Foundation of China (51522106);Zhejiang Key Research and Development Program (2017C01001);Public Projects of Zhejiang Province (2016C31121)

摘要/Abstract

摘要：

材料基因组工程能大幅度提高材料研发速度, 降低材料研发成本, 近年来受到广泛关注。本研究采用高通量制备工艺, 结合碳等离子体束流和基片位置的调控, 利用自主设计研制的45°双弯曲磁过滤阴极真空电弧设备, 沉积了厚度为4.7~183 nm的系列四面体非晶碳(ta-C)薄膜, 使用椭偏仪、原子力显微镜、拉曼光谱仪和X射线光电子能谱仪(XPS)表征了厚度对ta-C薄膜表面粗糙度、微结构和原子键态的影响。结果表明：通过碳等离子体束流和基片位置的调控, 实现了不同厚度ta-C薄膜的高通量制备。尽管膜厚不同, 所制备的ta-C薄膜均具有几乎不变的光滑表面(R_a=(0.38±0.02) nm)和色散值(Disp(G)), 说明不同厚度ta-C薄膜的sp³含量、sp²团簇尺寸保持相对稳定。XPS结果进一步证实ta-C薄膜的sp³相对含量均维持在(55±5)%。此外, 不同厚度ta-C薄膜的光学带隙E_opt均保持在(1.02±0.08)eV。相关结果为设计制备结构和光学性能可控的不同厚度ta-C薄膜提供了一种新思路。

关键词: 四面体非晶碳膜, 高通量, 厚度, 微结构, 光学带隙

Abstract:

Materials Genome Initiative (MGI), which greatly accelerates the research and development progress of new materials with reduced cost, has received widespread attention in recent years. In this report, high-quality ta-C films with different thicknesses, ranging from 4.7 nm to 183 nm, were high through-put deposited by a home-built double 45° bent filtered cathodic vacuum arc system, which was realized by the control of carbon plasma beam and substrate position. Meanwhile, the effects of film thickness on surface roughness, microstructure, and carbon atomic bond were investigated by atomic force microscope, spectroscopic ellipsometry, Raman spectra and X-ray photoelectron spectroscopy. Results show that the high through-put method by regulation of carbon plasma beam and selective placement of substrate enables to prepare ta-C films with various thicknesses. Particularly, the prepared ta-C films show almost constant smooth surface (R_a=(0.38±0.02) nm) and the value of Disp(G) regardless of the thickness changes, revealing the unchanged size of sp² cluster and sp³ content with different thicknesses. Furthermore XPS results confirm that sp³ relative content is kept at (55±5)%. In addition, the optical band gaps of ta-C films with different thicknesses remain at (1.02±0.08) eV. These results could provide new insight into design and fabricate the controlled microstructure and optical property of ta-C film with different thicknesses.

Key words: tetrahedral amorphous carbon film, high through-put, thickness, microstructure, optical band gap

中图分类号:

TQ127

魏菁, 李汉超, 柯培玲, 汪爱英. 不同厚度四面体非晶碳薄膜的高通量制备及表征[J]. 无机材料学报, 2018, 33(11): 1173-1178.

WEI Jing, LI Han-Chao, KE Pei-Ling, WANG Ai-Ying. Characterization of Tetrahedral Amorphous Carbon Film with Various Thickness by High Through-put Method[J]. Journal of Inorganic Materials, 2018, 33(11): 1173-1178.

图/表 7

图1 FCVA设备示意图(a)和样品位置示意图(b)

Fig. 1 Schematic diagram of FCVA system (a) and sample position (b)

表1 ta-C薄膜刻蚀和沉积的工艺参数

Table 1 Parameter of arc plasma etching and deposition for ta-C films

Process	Duct voltage/V	Arc current/A	Bias voltage/V	Ar flux/sccm	Time/min
Arc plasma etching	10.0	50.0	-300	20.0	5.0
Film deposition	10.0	50.0	-80	3.0	15/30/45

图2 不同样品厚度和生长速率的变化(虚线便于观察规律)

Fig. 2 Thicknesses (a) and growth rates (b) changes of different samples (The dotted lines faciliate observation)

图3 平均表面粗糙度随薄膜厚度的变化曲线

Fig. 3 Variations of the average surface roughness with film thickness

图4 不同厚度ta-C薄膜的紫外拉曼谱图(a), IT/IG(b), 色散值(c)

Fig. 4 UV Raman spectra (a), IT/IG (b), Disp(G) (c) of ta-C films with various film thickness.

图5 不同厚度ta-C薄膜的XPS C1s芯能级图谱(a)和sp3含量(c), 典型ta-C薄膜(41.3 nm)的C1s芯能级谱线(b)

Fig. 5 XPS C1s core level spectra (a) and sp3 content (c) of ta-C films with various film thickness, typical C1s core level spectrum of ta-C film (41.3 nm) (b)

图6 ta-C薄膜典型的消光系数(a)和光学带隙(b)图谱(膜厚为41.3 nm), 不同厚度ta-C薄膜的光学带隙图(c)

Fig. 6 Typical extinction coefficient (a) and optical bandgap (b) spectra of ta-C film with thickness of 41.3 nm, optical band gap of ta-C with different film thicknesses (c)

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不同厚度四面体非晶碳薄膜的高通量制备及表征

Characterization of Tetrahedral Amorphous Carbon Film with Various Thickness by High Through-put Method

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