Preparation of Diamond/Silicon Carbide Films with GradientComposition

Abstract

Abstract: iamond/SiC compositional gradient films were deposited by the microwave plasma CVD, using a gas mixture of hydrogen, methane and tetramethylsilane (TMS). Single crystalline silicon wafers, pretreated with nano-diamond particles
before deposition, were used as substrates. The films were characterized by scanning electron microscopy (SEM), electron probe microanalysis (EPMA) and energy-dispersive X-ray analysis (EDX). The results show that the content of diamond
and silicon carbide in the films changes with TMS flow rates, and diamond/silicon carbide films with gradient composition and smooth transition can be obtained by adjusting the TMS flow rate during deposition process.

Key words: MW-CVD, diamond, composite gradient film

CLC Number:

TB43

SHI Yu-Long,JIANG Xin. Preparation of Diamond/Silicon Carbide Films with GradientComposition[J]. Journal of Inorganic Materials.

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Preparation of Diamond/Silicon Carbide Films with GradientComposition

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