Effects of Atomic Hydrogen on Growth of Nanodiamond Films

Abstract

Abstract: The effects of atomic hydrogen on the growth of nanodiamond films were explored under different conditions of preparation. It is believed hydrogen-poor is not the necessary factor for preparation of nanodiamond films. The mechanisms of atomic hydrogen and Ar are different between the condition of hydrogen-poor and hydrogen-rich. Substrate bias fixed, can promote the production of H⁺. H⁺ can etch sp² carbon stronger than sp³ carbon, and can result in surfacspe defects. Therefore, the condition of hydrogen-rich will be assistant to the nucleation and growth of nanodiamond films.

Key words: atomic hydrogen, nanodiamond films, substrate bias, nucleation, growth

CLC Number:

O484
TN304

LIN Liang-Wu,TANG Yuan-Hong,ZHU Li-Bing. Effects of Atomic Hydrogen on Growth of Nanodiamond Films[J]. Journal of Inorganic Materials.

References

[1] Badziag P, Verwoerd W S, Ellis W P, et al. Nature, 1990, 343: 244--245.
[2] Angus J C, Hayman C C. Science, 1988, 241: 913--921.
[3] Lambrecht W R L, Lee C H, Segall B, et al. Nature, 1993, 364: 607--610.
[4] Yoshimoto M, Yoshida K, Maruta H, et al. Nature, 1999, 399: 340--342.
[5] Gruen D M, Liu S, Krauss A R, et al. Appl. Phys. Lett., 1994, 64: 1502--1504.
[6] Konov V I, Smolin A A, Ralchenko V G, et al. Diamond. Relat. Mater., 1995, 4: 1073--1078.
[7] Gruen D M. Mrs Bulletin, 1998, 23: 32--35.
[8] Zhang Y F, Zhang F, Gao Q J, et al. Diamond. Relat. Mater., 2001, 10: 1523--1527.
[9] Jiang X, Jia C L. Appl. Phys. Lett., 2002, 80(13): 2269--2271.
[10] Gruen D M. Annu. Rev. Mater. Sci., 1999, 29: 211--259.
[11] Lin T, Yu G. Y, Wee A T S, et al. Appl. Phys. Lett., 2000, 77(17): 2692--2694.
[12] Wu K, Wang E G, Cao Z X, et al. J. Appl. Phys., 2000, 88: 2967--2974.
[13] Lee J, Hong B, Messier R, et al. Appl. Phys. Lett., 1996, 69: 1716--1718.
[14] Lee J, Collins R W, Messier R, et al. Appl. Phys. Lett., 1997, 70: 1527--1529.
[15] Zhou D, Gruen D. M, Qin L C, et al. J. Appl. Phys., 1998, 84: 1981--1989.
[16] Zhou D, McCauley T. G, Qin L C, et al. J. Appl. Phys., 1998, 83: 540--543.
[17] Gruen D M, Pan X, Krauss A R, et al. J. Vac. Sci. Technol. A, 1994, 12: 1491--1495.
[18] Redfern P C, Horner D. A, Curtiss A A, et al. J. Phys. Chem., 1996, 100: 11654--11663.
[19] McCauley T G, Gruen D M, Krauss A R. Appl. Phys. Lett., 1998, 73: 1646--1648.
[20] Gruen D M, Redfern P C, Horner D A, et al. J. Phys. Chem. B, 1999, 103: 5459--5467.
[21] Gruen D M, Zuiker C D, Krauss A R, et al. J. Vac.Sci. Technol. A , 1995, 13: 1628--1632.
[22] Gruen D M, Golder L B, Editors G. Mrs Bulletn, 1998, 23: 16--17.
[23] Zhu W, Inspektor A, Badzian A R, et al. J. Appl. Phys., 1990, 68(14): 1489--1496.
[24] Cui J B, Shang N G, Liao Y, et al. Thin Solid Films, 1998, 334: 156--160.
[25] Cui J B, Fang R. J. Appl. Phys., 1997, 81: 2856--2862.
[26] Gu C Z, Jing X. J. Appl. Phys., 2000, 88: 1788--1793.
[27] Sharda T, Umeno M, Soga T, et al. Appl. Phys. Leet., 2000, 77: 4304--4306.
[28] Yugo S, Kanal T, Kimura T, et al. Appl. Phys. Lett., 1991, 58: 1036--1038.
[29] Jiang X, Klages C P, Zachai R, et al. Appl. Phys. Lett., 1993, 62: 3438--3440.
[30] Sharda T, Soga T, Jimbo T, et al. Diamond Relat. Mater., 2000, 9: 1331--1335.
[31] Sharda T, Soga T, Jimbo T, et al. Diamond Relat Mater., 2001, 10: 1592--1596.
[32] Shigesato Y, Boekenhauer R E, Sheldon B W, et al. Appl. Phys. Lett., 1993, 63: 314--316.
[33] Robertson J, Gerber J, Sattel S, et al. Appl. Phys. Lett., 1995, 66: 3287--3289.
[34] Robertson J. Diamond Relat. Mater., 1994, 3: 361--368.
[35] Fallon P, Veerasamy V S, Davis C A, et al. Phys. Rev. B, 1993, 48: 4777--4782.
[36] Mckenzie D R, Muller D, Pailthorpe B A. Phys. Rev. Lett., 1991, 67: 773--776.
[37] Gerber J, Weiler M, Sohr O, et al. Diamond Relat. Mater., 1993, 3: 506--509.
[38] Lifshitz Y, Lempert G D, Grossman E. Phys. Rev. Lett., 1994, 72: 2753-- 2756.
[39] Jiang X, Schiffmann K, Klages C P. Phys. Rev. B, 1994, 50: 8402--8410.
[40] Jiang X, Zhang W J, Paul M, et al. Appl. Phys. Lett., 1996, 68: 1927--1929.
[41] Zhang W J, Jiang X. Appl. Phys. Lett., 1996, 68: 2195--2197.
[42] Jiang X, Zhang W J, Klages C P. Phys. Rev. B, 1998, 58: 7064--7075.
[43] Paillard V, M$\acute{ e$linon P, Dupuis V, et al. Phys. Rev. B, 1994, 49: 11433--11439.
[44] Yang T S, Lai J Y, Cheng C L, et al. J. Appl. Phys., 2002, 92: 2133--2138.
[45] Davis J W, Haasz A A, Stangeby P C. J. Nucl. Mater., 1987, 145: 417--420.
[46] Yugo S, Kanal T, Kimura T, et al. Appl. Phys. Lett., 1991, 58: 1036--1038.
[47] Gerber J, Sattel S, Ehrhardt H, et al. J. Appl. Phys., 1996, 79: 4388--4396.
[48] Jiang X, Jia C L. Appl. Phys. Lett., 1995, 67: 1197--1199.
[49] Sharda T, Umeno M, Soga T, et al. J. Appl. Phys., 2001, 89: 4874--4878.
[50] Yang T S, Lai J Y, Wong M S, et al. J. Appl Phys., 2002, 92(9): 4912--4917.
[51] Yang T S, Lai J Y, Cheng C L, et al. Diamond Relat. Mater., 2001, 10: 2161--2166.
[52] Solomons T W G. Fundamentals of Organic Chemistry 5^th ed, (wiley, New York, 1997), chap. 8
[53] Park N, Park S, Hwang N M, et al. Phys. Rev. B, 2004, 69: 195411--1--195411--5.