Abstract: Boron-doped diamond thin films, synthesized by the HFCVD method, were analyzed by SEM and XRD. The results show that, when the boron concentration in the films increases, the crystallite orientation changes from (100) to (111), then tends to disorder. The doping of boron reduces the growth parameter α. The stress in the films is relaxed by twin crystals in the boron doping films. Consequently the shift of center phonon line of Raman spectrum becomes smaller.

Key words: twinning, HFCVD, boron doping diamond films