γ-LiAlO2 Layer on (0001) Sapphire Fabricated by Vapor Transport Equilibration

Abstract

Abstract: Using vapor transport equilibration(VTE) technique and post-annealing processing, we succeeded in the fabrication of γ-LiAlO₂ layer with a highly-preferred orientation of [100] on (0001) sapphire crystal. X-ray diffraction
indicates that the as-fabricated layer by VTE is a polycrystalline film shown to be a single-phase. When the γ-LiAlO₂ layers are annealed at 850～900℃ for about 120 hours in air, the layers become highly textured with [100]
orientation. These results reveal the possibility of fabricating γ-LiAlO₂ (100)// sapphires(0001) composite substrate for GaN-based epitaxial film by VTE.

Key words: GaN, vapor transport equilibration(VTE), γ-LiAlO₂, sapphire

CLC Number:

O484

LI Shu-Zhi,XU Jun,YANG Wei-Qiao,ZHOU Jun,ZHOU Sheng-Ming. γ-LiAlO₂ Layer on (0001) Sapphire Fabricated by Vapor Transport Equilibration[J]. Journal of Inorganic Materials.

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γ-LiAlO₂ Layer on (0001) Sapphire Fabricated by Vapor Transport Equilibration

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