Journal of Inorganic Materials

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Crystallinity and Ferroelectricity of MOD-derived Pb0.985La0.01(Zr0.4Ti0.6)O3 Thin Films

MA Jian-Hua, MENG Xiang-Jian, SUN Jing-Lan, CHU Jun-Hao   

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • Received:2003-12-04 Revised:2004-02-11 Published:2005-01-20 Online:2005-01-20

Abstract: Pb0.985La0.01(Zr,Ti)O3(PLZT) thin films were deposited onto LNO(100)/Si substrates by metal-organic decomposition (MOD) technique. An intermediate pre-annealing process was added
into the rapid thermal anneal (RTA) process to treat the films. Effects of intermediate pre-annealing process on crystallinity and ferroelectricity were investigated. The results show that the intermediate
pre-annealing process can affect the selection of crystalline texture. PLZT thin film without intermediate pre-annealing process displays (100)-preferential orientation. However, PLZT thin films with intermediate
pre-annealing process show random orientation. PLZT thin film without intermediate pre-annealing process shows the worse ferroelectricity. PLZT thin film with intermediate pre-annealing process of 380℃
displays the best properties. The ferroelectricity is mainly attributed to both the crystallinity and the defects in the PLZT thin films.

Key words: PLZT thin films, intermediate pre-annealing process, crystallinity, ferroelectricity

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