Sputtering Deposition of VO2 Film Using Plasma Emission Monitor as Reactive Gas Flow Rate Feedback Control

doi:10.15541/jim20150302

Abstract

Abstract:

Monoclinic VO₂ film was deposited on quartz substrate by reactive sputtering using the plasma emission monitor (PEM) system as reactive gas flow rate feedback control. Relationship between oxygen flow rate and plasma emission intensity was studied. It was found that single-phase VO₂(M) could be obtained steadily at specific relative emission intensity (REI), which were determined as 0.6-0.65, 0.65 and 0.6 for total deposition pressure of 0.8 Pa, 0.5 Pa and 0.2 Pa, respectively. XRD measurement indicated that the deposited VO₂ films were strongly oriented of (011) and the XPS measurements verified stoichiometry of the films as VO_2.02. Optical transmission measurement of VO₂ film exhibited an abrupt change of transmittance from 81% to 16% as VO₂ film switched from semiconductor state to metallic state, at transition temperature of 66℃.

Key words: vanadium dioxide, plasma emission monitor, feedback control, reactive sputtering, thin films

CLC Number:

TQ174

WANG Xiao, YAN Lu, LI Ying, CAO Yun-Zhen. Sputtering Deposition of VO₂ Film Using Plasma Emission Monitor as Reactive Gas Flow Rate Feedback Control[J]. Journal of Inorganic Materials, 2015, 30(11): 1228-1232.

Figures/Tables 5

Fig. 1 Schematic diagram of the experiment setup and control loop of PEM system

Fig. 2 The relative emission intensity (Vreactive/Vmetallic) vs oxygen flow curves (a) Oxygen flow rate was controlled by MFC and relative emission intensity was merely recorded; (b) Oxygen flow was feedback controlled by PEM system and the flow rate was recorded. The three curves were obtained under the total pressure of 0.8 Pa, 0.5 Pa and 0.2 Pa, respectively

Table 1 Deposition parameters and corresponding crystalline structures of the films

Samples	Total pressure/Pa	Relative emission intensity(V_reactive/V_metallic)	Oxygen flow/sccm	Crystalline structures
1#	0.8	0.7	2.4-2.3	V₅O₉
2#	0.8	0.65	2.7-2.5	VO₂(M)
3#	0.8	0.6	2.9-2.8	VO₂(M)
4#	0.8	0.5	2.9-2.8	VO₂(B),V₂O₅,V₆O₁₃
5#	0.8	0.4	2.9-2.8	VO₂(B)
6#	0.5	0.7	2.4-2.2	V₅O₉
7#	0.5	0.65	2.8-2.6	VO₂(M)
8#	0.5	0.6	3.0-2.8	V₃O₇, VO₂(B)
9#	0.2	0.65	2.9-2.7	V₅O₉
10#	0.2	0.6	3.2-3.0	VO₂(M)
11#	0.2	0.55	3.3-3.1	VO₂(B), V₃O₇, V₂O₅

Fig. 3 XRD pattern of VO2 (M) film (a) and XPS spectrum of VO2 (M) film (b)

Fig. 4 Temperature dependence of transmittance of VO2 film at wavelength of 2.5 μm (a) and derivative dTrans/dTemp curve for the heating cycle with dot line indicating its Gaussian fitting (b)

References 18

[1]	MORIN F J.Oxides which show a metal-to-insulator transition at the neel temperature.Phys. Rev. Lett., 1959, 3(1): 34-36.
[2]	KIVAISI R T, SAMIJI M.Optical and electrical properties of vanadium dioxide films prepared under optimized RF sputtering conditions.Sol. Energy Mater. Sol. Cells, 1999, 57(2): 141-152.
[3]	ZHANG Z T, GAO Y F, CHEN Z, et al.Thermochromic VO2 thin films: solution-based processing, improved optical properties, and lowered phase transformation temperature.Langmuir, 2010, 26(13): 10738-10744.
[4]	WANG H C, YI X J, LI Y.Fabrication of VO2 films with low transition temperature for optical switching applications.Opt. Commun., 2005, 256(4): 305-309.
[5]	KUMAN RTR, KARUNAGARAN B, MANGALARAJ D, et al.Pulsed laser deposited vanadium oxide thin films for uncooled infrared detectors.Sens. Actuator A-Phys., 2003, 107(1): 62-67.
[6]	GUINNETON F, SAUQUES L, VALMALETTE J C, et al.Optimized infrared switching properties in thermochromic vanadium dioxide thin films: role of deposition process and microstructure.Thin Solid Films, 2004, 446(2): 287-295.
[7]	VENKATASUBRAMANIAN C, CABARCOS O M, DRAWL W R, et al.Process-structure-property correlations in pulsed dc reactive magnetron sputtered vanadium oxide thin films.J. Vac. Sci. Technol. A, 2011, 29(6): 1504-1511.
[8]	LU S W, HOU L S, GAN F X.Surface analysis and phase transition of gel-derived VO2 thin films.Thin Solid Films, 1999, 353(1): 40-44.
[9]	MANNING T D, PARKIN I P, PEMBLE M E, et al.Intelligent window coatings: atmospheric pressure chemical vapor deposition of tungsten-doped vanadium dioxide.Chem. Mater., 2004, 16(4): 744-749.
[10]	MIYAZAKI H, UTSUNO F, SHIGESATO Y, et al.The structural characteristics of VOx films prepared by He-introduced reactive RF unbalanced magnetron sputtering.Thin Solid Films, 1996, 282(1): 436-440.
[11]	BERG S, NYBERG T.Fundamental understanding and modeling of reactive sputtering processes.Thin Solid Films, 2005, 476(2): 215-230.
[12]	SPROUL W D, CHRISTIE D J, CARTER D C.Control of reactive sputtering processes.Thin Solid Films, 2005, 491(1): 1-17.
[13]	LAPPALAINEN J, HEINILEHTO S, SAUKKO S, et al.Microstructure dependent switching properties of VO2 thin films.Sens. Actuator A-Phys., 2008, 142(1): 250-255.
[14]	SCHILLER S, HEISIG U, STEINFELDER K, et al.On the investigation of dc plasmatron discharges by optical-emission spectrometry.Thin Solid Films, 1982, 96(3): 235-240.
[15]	JASIM M K, SWADY R A.A plasma emission controller for reacive magnetron sputtering of titanium dioxide films.Adv. Theor. Appl. Mech., 2012, 5: 1-10.
[16]	INOUE S, OKADA F, KOTERAZAWA K.CrN films deposited by rf reactive sputtering using a plasma emission monitoring control.Vacuum, 2002, 66(3): 227-231.
[17]	CHRISTMANN T, FELDE B, NIESSNER W, et al.Thermochromic VO2 thin films studied by photoelectron spectroscopy.Thin Solid Films, 1996, 287(1): 134-138.
[18]	CHIU TW, TONOOKA K, KIKUCHI N.Influence of oxygen pressure on the structural, electrical and optical properties of VO2 thin films deposited on ZnO/glass substrates by pulsed laser deposition.Thin Solid Films, 2010, 518(24): 7441-7444.

Sputtering Deposition of VO₂ Film Using Plasma Emission Monitor as Reactive Gas Flow Rate Feedback Control

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