Reaction Mechanism of Ti3SiC2 Formed on the Diamond

doi:10.3724/SP.J.1077.2012.11804

Abstract

Abstract: Ti₃SiC₂ bonded diamond materials were fabricated by spark plasma sintering using Ti/Si/TiC/diamond abrasive as the raw materials. The result showed that displace, dispalce rate and vaccum degree of Ti-Si-2TiC sample sintered by SPS were obviously changed. The Ti/Si/TiC powders were obviously sintered and transformed to TiC and Ti₃SiC₂ at 1200℃ during the sintering process. With increasing sintering temperature, Ti₃SiC₂ content in the samples increased. Ti₃SiC₂ content in the samples were 65.9%, 79.97%, 87.5% and 90.1%, respectively. Addition of (5% and 10%) appropriate amounts of diamond did not inhibit the reaction synthesis of Ti₃SiC₂. SEM observation showed that diamond had one close combination with the matris, and Ti₃SiC₂ grains grew on the surface of diamond. One formation mechanism of Ti₃SiC₂ on the surface of diamond was proposed, C on the surface of diamond reacted with Ti and formed TiC firstly, then TiC reacted with Ti-Si phase and formed Ti₃SiC₂.

Key words: Ti₃SiC₂, diamond, reaction mechanism

CLC Number:

TG146

MU Yun-Chao, LIANG Bao-Yan, GUO Ji-Feng. Reaction Mechanism of Ti₃SiC₂ Formed on the Diamond[J]. Journal of Inorganic Materials, 2012, 27(10): 1099-1104.

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Reaction Mechanism of Ti₃SiC₂ Formed on the Diamond

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