Super Fast and High Power SiC Photoconductive Semiconductor Switches

doi:10.3724/SP.J.1077.2008.00425

Abstract

Abstract: High-power photoconductive semiconductor switches (PCSS) were fabricated on 0.2at％ vanadium-doped semi-insulating 6H-SiC (7.0×10⁸Ω·cm). V-doped 6H-SiC PCSS with 1mm gap displays a fast rise time (6.8ns), short photoconductivity pulse width (less than 20ns) and high-speed hotovoltaic response to 20ns laser pulse. The experimental results show that the linear peak voltage is increased with increasing bias voltage and excitation energy. The typical maximum photocurrent of the device at 2.5kV is about 57.5A, the peak electrical power delivered to a 40Ω load is 132kW.

Key words: silicon carbide, vanadium-doped, semiinsulating, photoconductive semiconductor switches

CLC Number:

TN305

YAN Cheng-Feng,SHI Er-Wei,CHEN Zhi-Zhan,LI Xiang-Biao,XIAO Bing. Super Fast and High Power SiC Photoconductive Semiconductor Switches[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2008.00425.

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Super Fast and High Power SiC Photoconductive Semiconductor Switches

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