Thermal Stability of Al-doped ZrO2 Films Prepared by Reactive RF Magnetron Sputtering

doi:10.3724/SP.J.1077.2007.01206

Abstract

Abstract: Al-doped ZrO₂ films with different microstructures were deposited on Si (100) substrates by using reactive RF magnetron sputtering process with metallic Zr and Al as targets in an argon-oxygen atmosphere. The films were characterized with high-resolution transmission electron microscope (HRTEM), X-ray diffraction (XRD), and atomic force microscope (AFM) to investigate variety of the thermal stability, the interfacial stability and the surface roughness of the films with different annealing temperatures. The influence of the microstructures of Al-doped ZrO₂ thin films on their electrical I-V characteristics was also discussed. The results show that the atomic content of Al in films has a significant influence on the microstructures, upon increasing the atomic content ratio of Al/Zr, the structure transition of the films is a-ZrO₂ (pure)→t-(Zr,Al)O₂ and c-(Zr,Al)O₂ (Al/Zr=1/4)→a-(Zr,Al)O₂(Al/Zr=4/5). Al-doped ZrO₂thin films with Al/Zr atomic ratio of 4/5 has the increase in the crystallization temperature compared to a pure ZrO₂film, so the thermal stability of the films is improved.

Key words: thin film physics, Al-doped ZrO₂thin film, magnetron sputtering, thermal stability

CLC Number:

O484

MA Chun-Yu,LI Zhi,ZHANG Qing-Yu. Thermal Stability of Al-doped ZrO₂ Films Prepared by Reactive RF Magnetron Sputtering[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2007.01206.

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Thermal Stability of Al-doped ZrO₂ Films Prepared by Reactive RF Magnetron Sputtering

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