Journal of Inorganic Materials ›› 2026, Vol. 41 ›› Issue (6): 787-794.DOI: 10.15541/jim20250426
• RESEARCH ARTICLE • Previous Articles Next Articles
HONG Enliu1(
), TU Xinchen1, LI Ziqing2(
), FANG Xiaosheng1(
)
Received:2025-10-28
Revised:2025-12-23
Published:2026-01-22
Online:2026-01-22
Contact:
LI Ziqing, associate professor. E-mail: lzq@fudan.edu.cn;About author:HONG Enliu (2000-), male, PhD candidate. E-mail: 21110300005@m.fudan.edu.cn
Supported by:CLC Number:
HONG Enliu, TU Xinchen, LI Ziqing, FANG Xiaosheng. Two-dimensional Perovskite Single Crystal Nanosheets: Floating Growth and Optoelectronic Performance[J]. Journal of Inorganic Materials, 2026, 41(6): 787-794.
Fig. 3 Optical microscopic images of various compositions of two-dimensional perovskite nanosheets grown by the liquid-air interfacial floating method Scale bar: 30 μm
Fig. 4 Analysis of the composition and optical properties of (BA)2PbBr4 nanosheets (a, b) Optical microscope magnification images in (a) bright field and (b) dark field (scale bar: 30 μm); (c) Thickness profile; (d) XRD pattern; (e) Photoluminescence spectrum; (f) UV-visible absorption spectrum
Fig. 5 (a) Crystal structure depiction, (b) SEM image (upper) and corresponding elemental distribution mappings (lower) (scale bar: 30 μm), (c) high-resolution TEM image and (d) selected area electron diffraction pattern of (BA)2PbBr4 nanosheets
Fig. 6 Analysis of the optoelectronic properties of (BA)2PbBr4 nanosheets (a) Structural diagram of the device and the corresponding optical microscope image; (b) I-V curves of the device under light of different wavelengths; (c) I-t curves of the device at the optimal response wavelength with different bias voltages; (d) Responsivity curve of the device as a function of wavelength at 3 V bias voltage. Colorful figures are available on website
| Material | Type | Testing condition | Responsivity/ (mA·W-1) | Specific detectivity/ Jones | Ion/off | Ref. |
|---|---|---|---|---|---|---|
| MoS2/CsPbBr3 | Film | 10 V, 385 nm | 0.4 | 3.5×109 | - | [S1] |
| (OA)2FAn-1PbnBr3n+1 | Film | 3 V, 442 nm | 3.2×104 | - | - | [S2] |
| (BA)2Pb(Cl0.1Br0.9)4 | Single crystal | 10 V, 340 nm | 3.19 | 3.87×1011 | ~10 | [S3] |
| MAPbI3/(BA)2(MA)3Pb4I13 | Film | 3 V, 405 nm | 9.4 | 3.1×108 | 8.91×103 | [S4] |
| (BA)2(MA)2Pb3I10 | Film | 30 V, - | 12.78 | - | 1.6×103 | [S5] |
| MAPbI3 | Film | 10 V, 650 nm | 1×102 | 1.02×1012 | 3×102 | [S6] |
| MoS2/CsPbBr3 | Single crystal | 10 V, 442 nm | 4.4×103 | 2.5×1010 | 1.67×104 | [S7] |
| (PEA)2(MA)Pb2I7 | Single crystal | 9.5 V, 600 nm | 3.87 | 2.92×1010 | ~103 | [S8] |
| (BA)2(MA)3Pb4I13 | Single crystal | 3 V, 532 nm | 71.9 | 1.1×1012 | ~105 | [S9] |
| Si/CsPbBr3 | Film | −1 V, 532 nm | 24.85 | 1.01×10¹¹ | ~9×102 | [S10] |
| (BA)2PbBr4 | Single crystal | 3 V, 370 nm | 19.7 | 1.14×1011 | 2.3×102 | This work |
Table S1 Performance comparison of this working device with other similar devices
| Material | Type | Testing condition | Responsivity/ (mA·W-1) | Specific detectivity/ Jones | Ion/off | Ref. |
|---|---|---|---|---|---|---|
| MoS2/CsPbBr3 | Film | 10 V, 385 nm | 0.4 | 3.5×109 | - | [S1] |
| (OA)2FAn-1PbnBr3n+1 | Film | 3 V, 442 nm | 3.2×104 | - | - | [S2] |
| (BA)2Pb(Cl0.1Br0.9)4 | Single crystal | 10 V, 340 nm | 3.19 | 3.87×1011 | ~10 | [S3] |
| MAPbI3/(BA)2(MA)3Pb4I13 | Film | 3 V, 405 nm | 9.4 | 3.1×108 | 8.91×103 | [S4] |
| (BA)2(MA)2Pb3I10 | Film | 30 V, - | 12.78 | - | 1.6×103 | [S5] |
| MAPbI3 | Film | 10 V, 650 nm | 1×102 | 1.02×1012 | 3×102 | [S6] |
| MoS2/CsPbBr3 | Single crystal | 10 V, 442 nm | 4.4×103 | 2.5×1010 | 1.67×104 | [S7] |
| (PEA)2(MA)Pb2I7 | Single crystal | 9.5 V, 600 nm | 3.87 | 2.92×1010 | ~103 | [S8] |
| (BA)2(MA)3Pb4I13 | Single crystal | 3 V, 532 nm | 71.9 | 1.1×1012 | ~105 | [S9] |
| Si/CsPbBr3 | Film | −1 V, 532 nm | 24.85 | 1.01×10¹¹ | ~9×102 | [S10] |
| (BA)2PbBr4 | Single crystal | 3 V, 370 nm | 19.7 | 1.14×1011 | 2.3×102 | This work |
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