Preparation of Polycrystalline Cu(In,Ga)Se2 Thin Film with Nano-metal Oxide: the Chemical Reaction Process and Its Properties

doi:10.3724/SP.J.1077.2013.12505

Abstract

Abstract: Polycrystalline Cu(In,Ga)Se₂ (CIGS) thin film was prepared by non-vacuum method with nano-metal oxide as starting materials. The evolution of the composition and structure during the preparation process was investigated by field emission scanning electron microscope, high resolution transmission electron microscope, energy dispersive analysis and X-ray diffraction. The properties of CIGS film was characterized using Hall Effect tester and absorption spectroscopic analysis. The results show that the nano-metal oxide is consist of CuO, In₂O₃, Ga₂O₃ and copper-indium, copper-gallium binary alloy oxides. The metal oxides gradually transform into Cu₁₁In₉ and Cu₉In₄ during the reduction reaction. Moreover, it forms a large number of pores, which is benefit for the selenide reaction. The selenium vapors enter the film along the pore, react with the reduction product and form CIS and CGS in the selenide process. Then, the polycrystalline CIGS film with the chalcopyrite structure forms. The carrier concentration, mobility and the resistivity of CIGS film are about 2.3×10¹⁵ cm^-3, 217 cm²/(V·s) and 36 Ω·cm, respectively. The obtained thin film is a p-type semiconductor with a bandgap of about 1.15 eV.

Key words: oxide, Cu(In,Ga)Se₂ thin-film, optical properties, reaction process

CLC Number:

O649

ZHENG Chun-Man, WEI Yong-Tao, XIE Kai, HAN Yu. Preparation of Polycrystalline Cu(In,Ga)Se₂ Thin Film with Nano-metal Oxide: the Chemical Reaction Process and Its Properties[J]. Journal of Inorganic Materials, 2013, 28(7): 701-706.

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Preparation of Polycrystalline Cu(In,Ga)Se₂ Thin Film with Nano-metal Oxide: the Chemical Reaction Process and Its Properties

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