Abstract: LiGaO_₂ is the most promising substrate newly found for the epitaxy of GaN. Mirror-like GaN(0001) films were
grown on LiGaO₂(001) substrates by using MOCVD. The GaN films and substrates were investigated by means of AFM, XRD and X-ray double-crystal diffraction.
The result shows that a preferable quality of GaN(0001) films can be grown on LiGaO₂(001) substrates by using MOCVD. LiGaO₂ being unstable under the conditions
of MOCVD which should be operated at high temperature and in deoxidize ambience, LiGaO₂ substrate cracks appear easily in the growth process, but no phase changes.

Key words: GaN, LiGaO₂, MOCVD