Surface Plasma Passivation of the Polycrystalline Silicon Thin Films by Using NH3 or N2O Gas

Journal of Inorganic Materials

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Surface Plasma Passivation of the Polycrystalline Silicon Thin Films by Using NH₃ or N₂O Gas

ZENG Xiang-Bin¹; Johnny K O Sin²; XU Zhong-Yang¹; RAO Rui ¹

1.Department of Electronic Science and Technology Huazhong University of Science and Technology; Wuhan 430074; Chian; 2. Department of Electrical and Electronic Engineering; The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China

Received:2000-08-07 Revised:2000-09-25 Published:2001-07-20 Online:2001-07-20

Abstract

Abstract: The poly-Si thin film was passivated by using NH₃ or N₂O plasma before deposition of gate diode. The poly-Si TFTs fabricated with this process have better electrical characteristics than those of conventional poly-Si TFT without NH₃ or N₂O plasma passivation. These devices also have better hot-carrier endurance and thermal stability. Both the nitrogen pile-up at the SiO₂/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grand boundaries of the poly-Si thin film in the channel region are the major causes.

Key words: NH₃, N₂O, surface passivation, poly-Si TFT

CLC Number:

O484

ZENG Xiang-Bin,Johnny K O Sin,XU Zhong-Yang,RAO Rui. Surface Plasma Passivation of the Polycrystalline Silicon Thin Films by Using NH₃ or N₂O Gas[J]. Journal of Inorganic Materials.

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Surface Plasma Passivation of the Polycrystalline Silicon Thin Films by Using NH₃ or N₂O Gas

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