Preparation and Characteristics of Indium Oxide Thin Films

doi:10.3724/SP.J.1077.2010.00141

Abstract

Abstract: In₂O₃ thin films were prepared on glass substrates by radio frequency (RF) magnetron sputtering. The structural, electrical and optical characteristics of In₂O₃ films were investigated by atomic force microscope (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscope, UV-Visible spectrophotometer and Hall effect measurements. It is found that the surface roughness of In₂O₃ thin film increases with growth temperature increasing. The X-ray diffraction (XRD) studies show that the films are polycrystalline and retain a cubic structure. As the growth temperature rises, the grain size of In₂O₃ thin film increases and the FWHM decreases, namely, the crystalline quality of the films is improved. The optical transmittance of the thin films exceeds 90%. The film grown in Ar atmosphere shows highest mobility with resistivity of 0.31Ω·cm, mobility of 9.69cm²/(V·s), and electron concentration of about 1×10¹⁸cm^-3. And the annealing can improve the electrical properties of the film grown in the Ar+O₂ atmosphere.

Key words: In₂O₃, RF magnetron sputtering, surface morphology, XRD, electrical properties

CLC Number:

TQ174

YUAN Zi-Jian,ZHU Xia-Ming,WANG Xiong,ZHANG Ying-Ying,WAN Zheng-Fen,QIU Dong-Jiang,WU Hui-Zhen,DU Bin-Yang. Preparation and Characteristics of Indium Oxide Thin Films[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2010.00141.

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