Abstract: The preparation of high quality polycrystalline silicon films at low temperature (<600℃) has been recently become one of the hot spots, owing to the requirement
of preparing polycrystalline silicon thin film transistors in the active matrix liquid crystal display on the substrate of common glass. In this paper, the new
process for crystallization of amorphous silicon films, named the metal induced lateral crystallization of amorphous silicon films at low temperatures, was developed.
Aluminium thin films were evaporated on the top of the amorphous silicon films and selectively formed by photolithograph. The films were subsequently annealed in N₂
atmosphere. The crystallization mechanism of a-Si thin film by Al induced was discussed.The results show that the amorphous silicon right under the Al layer can be crystallized
by annealing at 560℃ for 6h and the thin films are polycrystalline silicon thin films.

Key words: metal induced crystallization, low temperature, amorphous silicon film, polycrystalline silicon film