Effects of Growth Temperature on AlxGa1-xN Thin Films on Sapphire with High Al Contents

doi:10.3724/SP.J.1077.2010.00386

Abstract

Abstract: Deposition parameters are important to the characteristics of the Al_xGa_1-xNfilms. Effects of the deposition temperature on the defects densities and the photoluminescence of the Al_xGa_1-xN films with high Al content were investigated, which is deposited by low pressure MOCVD on sapphire. High resolution XRD, UVVisible transmittance, AFM, SEM, and photoluminescence spectroscope were used to characterize the Al_xGa_1-xN films with high Al content. It is found that as the growth temperature increases, the screw dislocation density in Al_xGa_1-xN films increases, while the edge dislocation density decreases. So simply increasing deposition temperature is not a good way to reduce the total defects density or enhance the photoluminescence of the high Al content Al_xGa_1-xN films. Further analysis shows that higher deposition temperature is beneficial to achieve high Al content Al_xGa_1-xN films. It’s found that as the deposition temperature increases, Al content in Al_xGa_1-xN films also increases, which results in the increase of the bandgap of the films. Therefore, moderately increasing the deposition temperature （1000-1050℃）is an effective way to increase Al content in Al_xGa_1-xN films. Nevertheless, too higher deposition temperature （>1100℃） is detrimental for the photoluminescence of the Al_xGa_1-xN films.

Key words: AlGaN, high Al content, MOCVD, epitaxy, deposition temperature

CLC Number:

JI Zhen-Guo,LOU Yao,MAO Qi-Nan. Effects of Growth Temperature on Al_xGa_1-xN Thin Films on Sapphire with High Al Contents[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2010.00386.

References

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Effects of Growth Temperature on Al_xGa_1-xN Thin Films on Sapphire with High Al Contents

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