Influence of Tiny ZnO on Luminescence Intensity of Zn2SiO4:Mn Films

doi:10.3724/SP.J.1077.2006.01506

Abstract

Abstract: Magnesium-doped zinc silicate (Zn₂SiO₄:Mn) was prepared on oxidized silicon wafer by a simple sol-gel process. The crystallinity of films was characterized by X-ray diffraction and optical properties were measured by UV-Vis and photoluminescence spectra. The influence of annealing temperature on films properties was also studied systematically. It’S found that proper ZnO can enhance the photoluminescence intensity of Zn₂SiO₄:Mn films. And the mechanism was explained by using the model of quantum confinement-luminescence center proposed by G.G. Qin.

Key words: Zn2SiO4, ZnO, photoluminescence, quantum confinement-luminescence center

CLC Number:

TN304
O484

XI Jun-Hua,JI Zhen-Guo,LIU Kun,WANG Chao,DU Juan. Influence of Tiny ZnO on Luminescence Intensity of Zn₂SiO₄:Mn Films
[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2006.01506.

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Influence of Tiny ZnO on Luminescence Intensity of Zn₂SiO₄:Mn Films

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