Preparation and Electrical Properties of CaCu3Ti4O12 Thin Ceramic Sheets via Water-based Tape Casting

doi:10.15541/jim20140255

Abstract

Abstract:

Thin ceramic sheet of CaCu₃Ti₄O₁₂ has a great significance for preparation of multiplayer ceramic chip capacitors. In this work, a simple plan was made to achieve CaCu₃Ti₄O₁₂ thin ceramic sheets with excellent dielectric properties. Thin ceramic sheets of CaCu₃Ti₄O₁₂ were prepared via water-based tape casting at various sintering temperatures. The CaCu₃Ti₄O₁₂ samples sintered at 1080℃ exhibit a great performance on dielectric properties with high permittivity (ε_r=98605) and low dielectric loss (tanδ=0.028) which are better than those of samples prepared by conventional dry pressing. Meanwhile, the complex impedance spectra were measured to explain the mechanism of special electrical behaviors of CaCu₃Ti₄O₁₂ ceramics. These testing results indicate that the CaCu₃Ti₄O₁₂ ceramics via tape casting exhibits a better performance of giant permittivity and lower dielectric loss than other reports, which provides a possibility for the application of the CaCu₃Ti₄O₁₂ in modern micro-electronics technology.

Key words: perovskite, tape casting, dielectric properties, grain boundary

CLC Number:

TQ174

LI Wei, XIONG Zhao-Xian, XUE Hao. Preparation and Electrical Properties of CaCu₃Ti₄O₁₂ Thin Ceramic Sheets via Water-based Tape Casting[J]. Journal of Inorganic Materials, 2014, 29(11): 1228-1232.

Figures/Tables 7

Fig. 1 XRD patterns of thin CCTO ceramic sheets sintered at different temperatures, comparing with CCTO (PDF 01-075-1149)

Fig. 2 SEM images of the CaCu3Ti4O12 samples sintered at (a) 1040℃, (b) 1060℃, (c) 1080℃ and (d) 1100℃

Fig. 3 SEM images of the sample sintered at 1080℃ (a and b), EDX patferns of grain (c) and grain boundary region (d)

Fig. 4 Frequency dependence of permittivity and loss of samples sintered at different temperatures at room temperature

Fig. 5 Temperature dependence of permittivity and loss of samples sintered at different temperatures

Fig. 6 Complex impedance plane measured at room temperature (25℃) for CaCu3Ti4O12 samples sintered at different temperatures Inset in (a) shows an expanded views of the high-frequency data and in (b) shows an expanded views of the high-frequency data close to the origin

Fig. 7 Improved equivalent circuit model according to the IBLC and Schottky barrier model Grains and grain boundaries respectively correspond to a RCD element. Diode stand for a Schottky-type potential barrier

References 23

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Preparation and Electrical Properties of CaCu₃Ti₄O₁₂ Thin Ceramic Sheets via Water-based Tape Casting

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