Journal of Inorganic Materials ›› 2014, Vol. 29 ›› Issue (12): 1313-1319.DOI: 10.15541/jim20140115

• Orginal Article • Previous Articles     Next Articles

Wettability and Wetting Process in Cu/Ti3SiC2 System

LU Jin-Rong, ZHOU Yang, LI Hai-Yan, ZHENG Yong, LI Shi-Bo, HUANG Zhen-Ying   

  1. (School of Mechanical & Electronic Control Engineering, Beijing Jiaotong University, Beijing 100044, China)
  • Received:2014-03-11 Revised:2014-05-15 Published:2014-12-20 Online:2014-11-20
  • About author:LU Jin-Rong. E-mail:
  • Supported by:
    National Natural Science Foundation of China (50672005, 51172015);The Fundamental Research Funds for the Central Universities (2011YJS051)


Effects of wetting temperature and Ti3SiC2 constituent elements Si and Ti on the wettability of Cu/Ti3SiC2 system were investigated in vacuum via sessile drop technique. The results show that the wettability of Cu/Ti3SiC2 system is fairly well at elevated temperature because of the reaction between Cu and Ti3SiC2. The reaction zone in Cu/Ti3SiC2 interface becomes larger and deeper with the temperature increasing, and which leads to the decrease in contact angle. Its reaction rate is accelerated when the temperature exceeds 1250℃. The minimum contact angle of 15.1° is measured at 1270℃. XRD and SEM results indicate that the reaction products are TiCx and CuxSiy, and the reaction layer is mainly consisted of Cu, Ti3SiC2, TiCx and CuxSiy depending on the wetting temperature. The wettability of Cu/Ti3SiC2 system is improved by the reaction layer. Adding alloying element Si or Ti to Cu is harmful to the wettability between Cu and Ti3SiC2 since Si inhibits the decomposition of Ti3SiC2 and Ti hinders the infiltration of Cu into Ti3SiC2.

Key words: Cu/Ti3SiC2, wettability, interfacial reaction

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