二维MXenes材料在柔性光电探测器中的应用展望

doi:10.15541/jim20230327

无机材料学报 ›› 2024, Vol. 39 ›› Issue (2): 186-194.DOI: 10.15541/jim20230327 CSTR: 32189.14.10.15541/jim20230327

所属专题：【信息功能】柔性材料(202409)；【信息功能】MAX层状材料、MXene及其他二维材料(202409)

二维MXenes材料在柔性光电探测器中的应用展望

李腊¹^,²(), 沈国震¹^,²()

1.北京理工大学集成电路与电子学院, 北京 100081
2.北京理工大学柔性电子器件与智造研究所, 北京 102488

收稿日期:2023-07-19 修回日期:2023-09-12 出版日期:2023-09-12 网络出版日期:2023-09-12
通讯作者: 沈国震, 教授. E-mail: gzshen@bit.edu.cn
作者简介:李腊(1991-), 女, 副教授. E-mail: lali@bit.edu.cn
基金资助:
国家自然科学基金(61888102);北京市自然基金(L223006)

2D MXenes Based Flexible Photodetectors: Progress and Prospects

LI La¹^,²(), SHEN Guozhen¹^,²()

1. School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
2. Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China

Received:2023-07-19 Revised:2023-09-12 Published:2023-09-12 Online:2023-09-12
Contact: SHEN Guozhen, professor. E-mail: gzshen@bit.edu.cn
About author:LI La (1991-), female, associate professor. E-mail: lali@bit.edu.cn
Supported by:
National Natural Science Foundation of China(61888102);Beijing Natural Science Foundation(L223006)

摘要/Abstract

摘要：

二维过渡金属碳/氮化物(MXenes)自2011年被首次报道以来, 凭借其特殊的二维层状结构、优异的导电性和电化学性能在能源、催化、传感、电磁屏蔽和微波吸收等领域吸引了极大关注。近几年, 随着对该材料认识的不断加深, 其在光电领域的研究也不断深入。与其它领域不同, 光电器件聚焦于延伸MXenes材料半导体性质, 通过设计表面官能团、精准控制层数等来打开材料带隙, 从而使其从金属性质转变为半导体性质。本文主要围绕MXenes材料的光电性质, 介绍其在柔性光电子器件中的应用, 系统阐述MXenes材料在透明电子器件、光电探测器、图像传感器、光电晶体管、人工神经视觉网络系统的应用前沿现状与趋势, 并展望了MXenes基柔性光电器件面临的挑战以及未来发展前景。

关键词: MXene, 柔性电子, 透明电子, 光电探测器, 带隙调控, 专题评述

Abstract:

Two-dimensional (2D) transition metal carbides/nitrides (MXenes), since their discovery in 2011, have attracted great attention in the fields of energy storage, catalysis, sensors, electromagnetic interference shielding and microwave absorption and so on, owing to their special 2D layered structure, excellent electrical conductivity and electrochemical properties. In recent years, with the deep understanding of MXenes, the research on the realm related to optoelectronic properties has been widely concerned. Unlike other application fields, optoelectronic devices based on MXenes focus on extending semiconductor properties, including tunable band gap of the MXenes via design of the surface functional groups and layer control, etc., so as to achieve their transformation from metal to semiconductor properties. This paper revolves around the photoelectric properties of MXenes, mainly introduce its application in flexible optoelectronic devices, and systematically describe their current status and trend in transparent electronic devices, photodetectors, image sensors, transistors, and artificial neural vision network systems. The challenges and future development prospects of MXenes-based flexible optoelectronic devices are also proposed.

Key words: MXene, flexible electronics, transparent electronics, photodetector, tunable band gap, perspective

中图分类号:

TB383

李腊, 沈国震. 二维MXenes材料在柔性光电探测器中的应用展望[J]. 无机材料学报, 2024, 39(2): 186-194.

LI La, SHEN Guozhen. 2D MXenes Based Flexible Photodetectors: Progress and Prospects[J]. Journal of Inorganic Materials, 2024, 39(2): 186-194.

图/表 7

图1 MXenes材料在柔性光电领域的应用[32⇓⇓-35]

Fig. 1 Application of MXenes in flexible optical electronic devices[32⇓⇓-35] Including transparent device, photodetector, image sensor array, transistor, and artificial neural network

图2 MXene基异质结型光电探测器[32]

Fig. 2 MXene based heterojunction materials for photodetector devices[32] (a-c) Inorganic-inorganic (MXene-Si) heterostructure; (d-f) Inorganic-organic (MXene-RNA) heterojunction

图3 纯MXene基光电探测器[44]

Fig. 3 Pure MXene based photodetector devices[44] (a) Synthesis process of Ti3C2Tx-C12H26; (b) Schematic diagram of the Ti3C2Tx-C12H26 based photodetector; (c) I-V curves of the fabricated devices; (d) Responsivity and specific detectivity of the photodetector

图4 Ti3C2Tx-RAN高像素图像传感器[34]

Fig. 4 MXene based 1024-pixel image sensor[34] (a) Optical photograph of Ti3C2Tx-RAN image sensor array; (b) Schematic diagram of multipixel image sensor imaging; (c) Deer pattern composed of 1024-pixel output by Ti3C2Tx-RAN photodetectors

图5 MXene基光电晶体管[51]

Fig. 5 MXene based photoelectric transistors[51] (a) Schematic process for MXene based photoelectric transistors; (b) Transfer curves of the MXene based photoelectric transistors under dark and different wavelength incident light; (c) UV response cycle test

图6 MXene基透明电子器件[35]

Fig. 6 MXene based transparent photodetector[35] (a) Schematic of synthesis process of leaf-based MXene electrodes; (b) Optical photograph of the leaf-based MXene electrodes under deformations; (c) Transmittance of the leaf-based MXene photodetector; (d) I-V curves and (e) responsivity of the MXene photodetector

图7 MXene基柔性人工神经视觉网络[33]

Fig. 7 Pure MXene based flexible artificial neural network[33] (a) Schematic diagram of human visual recognition system; (b) Schematic diagram of artificial neural network using image sensor array for image recognition; (c) Comparison of recognition rates of two kinds of artificial neural vision network; (d) Recognition probability maps of three letters; (e) The resulted recognition probability diagram

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二维MXenes材料在柔性光电探测器中的应用展望

2D MXenes Based Flexible Photodetectors: Progress and Prospects

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