超声物理气相沉积法制备 (00l) 取向 HgI2 膜的研究

doi:10.3724/SP.J.1077.2011.00261

无机材料学报 ›› 2011, Vol. 26 ›› Issue (3): 261-264.DOI: 10.3724/SP.J.1077.2011.00261 CSTR: 32189.14.SP.J.1077.2011.00261

超声物理气相沉积法制备 (00l) 取向 HgI₂ 膜的研究

苏青峰¹,史伟民¹,王林军¹,李东敏²,夏义本¹

1.上海大学材料科学与工程学院, 上海 200072; 2. 上海西域机电系统有限公司, 上海200131

收稿日期:2010-05-06 修回日期:2010-06-12 出版日期:2011-03-20 网络出版日期:2011-02-18
作者简介:苏青峰(1978-), 男, 博士, 高级工程师.
基金资助:
国家自然科学基金(10775096); 教育部长江学者与创新团队发展计划(IRT0739), 上海市重点学科(S30107)

Effects of Ultrasonic Process on Properties of (00l)-oriented HgI₂Films byHot-wall PVD

SU Qing-Feng¹, SHI Wei-Min¹, WANGLin-Jun¹, LI Dong-Min², XIA Yi-Ben¹

1. School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China; 2. Shanghai Westingarea M&E System Co. Ltd, Shanghai 200137, China

Received:2010-05-06 Revised:2010-06-12 Published:2011-03-20 Online:2011-02-18
Supported by:
National Natural Science Foundation of China (10775096); Program for Changjiang Scholars and Innovative Research Team in University (IRT0739);Shanghai Leading Academic Disciplines (S30107)

摘要/Abstract

摘要： 超声波作用下, 采用热壁物理气相沉积法在相对较低温度下(<90℃)成功制备了(00l)取向多晶碘化汞膜, 分析了超声工艺对(00l)取向多晶碘化汞膜质量的影响. 采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、拉曼光谱仪(Raman)对(00l)取向多晶碘化汞膜进行了表征. 结果表明, 超声波作用下, 相对较低的生长温度能够获得高质量(00l)取向多晶碘化汞膜, 同时超声波工艺不仅能够明显改善多晶碘化汞厚膜的质量而且能提高生长速率.

关键词: 碘化汞膜, 多晶, 物理气相沉积, 超声波

Abstract: Polycrystalline (00l)-oriented HgI₂ films were prepared on ITO glass substrate by the modified Water Bath Hot Wall Physical Vapor Deposition method in the ultrasonic wave field.High quality polycrystalline (00l)-oriented HgI₂ films, growing along the (00l) crystal plane with columnar and uniform grains, were obtained. Effects of growth process parameters on the quality of(00l)-oriented polycrystalline HgI₂films were discussed. The microstructure and surface morphology of HgI₂ films were characterized by X-ray diffraction (XRD), scan electron microscopes (SEM) and Raman spectrum. The results indicatedthat ultrasonic wave could improve the quality of HgI₂films and decrease the deposition temperature of HgI₂ films with increasing ultrasonic frequency from 0 to 59kHz. The growth rate of HgI₂ filmswas increased with the frequency of ultrasonic wave.

Key words: mercuric iodidefilms, polycrystalline, physical vapor deposition, ultrasonicwave

中图分类号:

O484

苏青峰, 史伟民, 王林军, 李东敏, 夏义本. 超声物理气相沉积法制备 (00l) 取向 HgI₂ 膜的研究[J]. 无机材料学报, 2011, 26(3): 261-264.

SU Qing-Feng, SHI Wei-Min, WANGLin-Jun, LI Dong-Min, XIA Yi-Ben. Effects of Ultrasonic Process on Properties of (00l)-oriented HgI₂Films byHot-wall PVD[J]. Journal of Inorganic Materials, 2011, 26(3): 261-264.

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超声物理气相沉积法制备 (00l) 取向 HgI₂ 膜的研究

Effects of Ultrasonic Process on Properties of (00l)-oriented HgI₂Films byHot-wall PVD

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