脉冲电场下ZnO压敏陶瓷动态击穿过程研究

doi:10.15541/jim20180429

无机材料学报 ›› 2019, Vol. 34 ›› Issue (7): 715-720.DOI: 10.15541/jim20180429

脉冲电场下ZnO压敏陶瓷动态击穿过程研究

祝志祥¹,张强¹,朱思宇²,卢成嘉³,刘艺³,杨佳³,吴超峰⁴,曹林洪²,王轲⁴(),高志鹏³(),朱承治⁵

^1. 全球能源互联网研究院有限公司电工新材料研究所, 先进输电技术国家重点实验室, 北京 102211
^2. 西南科技大学材料科学与工程学院, 绵阳 621000
^3. 中国工程物理研究院流体物理研究所, 冲击波物理与爆轰物理重点实验室, 绵阳 621900
^4. 清华大学材料科学与工程学院, 北京 100084
^5. 国网浙江省电力有限公司, 杭州 310007

收稿日期:2018-09-14 修回日期:2018-11-12 出版日期:2019-07-20 网络出版日期:2019-06-26
作者简介:祝志祥(1981-), 男, 博士. E-mail:zhuzhixiang003@163.com
基金资助:
国家电网公司科技项目(52110417000S)

Dynamic Breakdown of ZnO Varistor Ceramics under Pulsed Electric Field

ZHU Zhi-Xiang¹,ZHANG Qiang¹,ZHU Si-Yu²,LU Cheng-Jia³,LIU Yi³,YANG Jia³,WU Chao-Feng⁴,CAO Lin-Hong²,WANG Ke⁴(),GAO Zhi-Peng³(),ZHU Cheng-Zhi⁵

^1. State Key Laboratory of Advanced Power Transmission Technology, Institute of New Electrical Materials, Global Energy Interconnection Research Institute, Beijing 102211, China
^2. School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621000, China
^3. Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, China
^4. School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
^5. State Grid Zhejiang Electric Power Co., Ltd., Hangzhou 310007, China

Received:2018-09-14 Revised:2018-11-12 Published:2019-07-20 Online:2019-06-26
Supported by:
National Power Grid Corp Science and Technology Project(52110417000S)

摘要/Abstract

摘要：

陶瓷电击穿问题涉及热、光、电多场耦合效应, 一直是非平衡物理学研究的重点和热点。本工作在不同烧结温度下制备了晶粒尺寸大小不同的氧化锌陶瓷, 采用脉冲高压发生装置对陶瓷进行击穿实验, 通过对陶瓷击穿过程的分析和对比, 研究了ZnO陶瓷体击穿的时间步骤。结果显示, 不同晶粒大小的陶瓷击穿过程均在7 μs之内, 典型的压降曲线分为三个阶段。第一个阶段对应于材料中的气孔击穿和击穿通道初步形成; 第二阶段对应于晶界击穿; 第三个阶段是导电通道的完全形成。研究数据显示, 晶粒击穿过程的持续时间最长, 晶界次之, 气孔的击穿时间最短。不同烧结温度下, 样品晶界和晶粒的击穿时间以及气孔的击穿速度均存在差异。

关键词: ZnO陶瓷, 多晶材料, 击穿过程, 脉冲电压

Abstract:

Electrical breakdown process of ceramics is a complex process related to electrical, thermal, and light effects. It has attracted lots of attentions. But the mechanism of dielectric breakdown is still under debate, especially for the solid ceramics. In this study, the ceramics with different grain size were sintered at different temperatures. A square pulsed voltage of 27 kV with the pulse width of 7 ms was generated to breakdown the ZnO ceramics with a thickness of 2 mm. Electric breakdown process of these ceramics were investigated using a homemade high-time- resolution electric detection system with the resolution < 1 ns. Compared the electric behaviors of ZnO ceramics with different grain sizes during the breakdown process, it is clear that the whole electric breakdown process could be divided into three main steps, all of which can completed within 7 ms. The first breakdown step is the pores breakdown due to the electric field concentration, and the second step is the grain boundaries breakdown, and then the bulk grain is broken-down leading to form the whole electrical breakdown channel. The data shows that the breakdown process of the grains has the longest duration, the grain boundary is the second, and the pores breakdown is the shortest. For the ceramics with different grain sizes, the breakdown durations of the grain boundaries are different. The duration and electrical breakdown speed of the three step processes are directly affected by the resistance uniformity and carrier concentration of the materials.

Key words: ZnO ceramics, polycrystalline materials, breakdown process, pulse voltage

中图分类号:

TN304

祝志祥,张强,朱思宇,卢成嘉,刘艺,杨佳,吴超峰,曹林洪,王轲,高志鹏,朱承治. 脉冲电场下ZnO压敏陶瓷动态击穿过程研究[J]. 无机材料学报, 2019, 34(7): 715-720.

ZHU Zhi-Xiang,ZHANG Qiang,ZHU Si-Yu,LU Cheng-Jia,LIU Yi,YANG Jia,WU Chao-Feng,CAO Lin-Hong,WANG Ke,GAO Zhi-Peng,ZHU Cheng-Zhi. Dynamic Breakdown of ZnO Varistor Ceramics under Pulsed Electric Field[J]. Journal of Inorganic Materials, 2019, 34(7): 715-720.

图/表 6

图1 样品的XRD图谱

Fig. 1 XRD patterns of the samples sintered at 1000 and 1150 ℃

图2 样品断面的SEM照片

Fig. 2 SEM images of the samples sintered at 1000 (a) and 1150 ℃ (b)

图3 装置等效电路图(a)和加载电压波形(b)

Fig. 3 Circuit of experimental set-up (a) and applied voltage curve (b)

图4 不同烧结温度陶瓷样品的击穿过程中的电场变化波形, 紫色电压平台区为样品稳定区, 橙色电压下降区为击穿过程区

Fig. 4 Voltage change during breakdown process The purple voltage platform area is the sample stable area, and the orange voltage drop area is the breakdown process area

图5 陶瓷电阻变化曲线(a)和击穿过程的图解示意图(b)~(e)

Fig. 5 Resistance change during breakdown process (a) and schematic diagrams of breakdown processes (b)-(e)

图6 两个样品在气孔击穿(a)、晶界击穿(b)和晶粒击穿(c)时的对比图

Fig. 6 Voltage changes during pores breakdown (a), grains boundary breakdown (b), and grains breaksdown (c)

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脉冲电场下ZnO压敏陶瓷动态击穿过程研究

Dynamic Breakdown of ZnO Varistor Ceramics under Pulsed Electric Field

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[2]	李盛涛,刘辅宜,贾广平. 氧化锌压敏陶瓷几何效应的统计法研究[J]. 无机材料学报, 1997, 12(4): 525-530.