无机材料学报 ›› 2017, Vol. 32 ›› Issue (9): 985-990.DOI: 10.15541/jim20160664 CSTR: 32189.14.10.15541/jim20160664

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金刚石线锯切割多晶硅片表面制绒工艺研

武晓玮1, 2, 李佳艳1, 2, 谭 毅1, 2   

  1. (1. 大连理工大学 材料科学与工程学院, 大连 116024; 2. 辽宁省太阳能光伏系统重点实验室, 大连 116024)
  • 收稿日期:2016-11-29 修回日期:2017-01-18 出版日期:2017-09-30 网络出版日期:2017-08-29
  • 作者简介:武晓玮(1991–),男,博士研究生. E-mail: wuxiaowei261@mail.dlut.edu.cn
  • 基金资助:
    国家自然科学基金(51574057);中央高校基本科研业务费专项资金(DUT15QY07)

Technology of Preparing Diamond Wire Cut Multicrystalline Silicon Wafer Texture Surfac

WU Xiao-Wei1, 2, LI Jia-Yan1, 2, TAN Yi1, 2   

  1. (1. School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China; 2. Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116024, China)
  • Received:2016-11-29 Revised:2017-01-18 Published:2017-09-30 Online:2017-08-29
  • About author:WU Xiao-Wei. E-mail: wuxiaowei261@mail.dlut.edu.cn

摘要:

晶体硅片的制绒技术是太阳能电池制造工艺中的关键步骤。本研究以工业中酸制绒方法为基础, 研究了腐蚀时间、浓度对绒面结构以及反射率的影响。此外, 还采用金属催化化学腐蚀法进行制绒, 选用氢氟酸和硝酸银作为腐蚀液。而且对两种制绒方法效果进行了对比。研究获得的最优绒面结构及反射率结果的实验条件为: 氢氟酸浓度4.6 mol/L、硝酸银浓度0.02 mol/L, 室温下反应90 min, 得到的平均反射率为8%, 远低于目前多晶硅片制绒生产标准。

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关键词: 金刚石线锯, 多晶硅, 制绒, 反射率

Abstract:

The texturization technology of multicrystalline silicon wafers is the key step of solar cell manufacture. Based on the acid etching technology widely used in industrial-scale manufacture, the influence of etching time and the components concentration of etching solution on the structure of texturization surface and reflectivity were investigated. In addition, the metal-catalyzed chemical etching technology was used to process the texture surface. The etching solution used in this method consists of hydrofluoric acid (HF) and silver nitrate (AgNO3). At the same time, the texture surface and reflectivity of silicon wafers etched by these two technologies were compared to select the ideal texture surface with uniform structure and low reflectivity. The results show that the best texture surface structure and reflectivity can be obtained under following reaction conditions: concentrations of HF and AgNO3 of 4.6 mol/L and 0.02 mol/L, respectively, reaction time of 90 min, and room temperature. The average reflectivity of silicon wafer after etching in this condition is 8 %, which is far lower than that by traditional method in current industry.

Key words: diamond wire-sawing, multicrystalline silicon, texturization, reflectivity

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