金刚石线锯切割多晶硅片表面制绒工艺研

doi:10.15541/jim20160664

摘要/Abstract

摘要：

晶体硅片的制绒技术是太阳能电池制造工艺中的关键步骤。本研究以工业中酸制绒方法为基础, 研究了腐蚀时间、浓度对绒面结构以及反射率的影响。此外, 还采用金属催化化学腐蚀法进行制绒, 选用氢氟酸和硝酸银作为腐蚀液。而且对两种制绒方法效果进行了对比。研究获得的最优绒面结构及反射率结果的实验条件为: 氢氟酸浓度4.6 mol/L、硝酸银浓度0.02 mol/L, 室温下反应90 min, 得到的平均反射率为8%, 远低于目前多晶硅片制绒生产标准。

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关键词: 金刚石线锯, 多晶硅, 制绒, 反射率

Abstract:

The texturization technology of multicrystalline silicon wafers is the key step of solar cell manufacture. Based on the acid etching technology widely used in industrial-scale manufacture, the influence of etching time and the components concentration of etching solution on the structure of texturization surface and reflectivity were investigated. In addition, the metal-catalyzed chemical etching technology was used to process the texture surface. The etching solution used in this method consists of hydrofluoric acid (HF) and silver nitrate (AgNO₃). At the same time, the texture surface and reflectivity of silicon wafers etched by these two technologies were compared to select the ideal texture surface with uniform structure and low reflectivity. The results show that the best texture surface structure and reflectivity can be obtained under following reaction conditions: concentrations of HF and AgNO₃ of 4.6 mol/L and 0.02 mol/L, respectively, reaction time of 90 min, and room temperature. The average reflectivity of silicon wafer after etching in this condition is 8 %, which is far lower than that by traditional method in current industry.

Key words: diamond wire-sawing, multicrystalline silicon, texturization, reflectivity

中图分类号:

TM914

武晓玮, 李佳艳, 谭毅. 金刚石线锯切割多晶硅片表面制绒工艺研[J]. 无机材料学报, 2017, 32(9): 985-990.

WU Xiao-Wei, LI Jia-Yan, TAN Yi. Technology of Preparing Diamond Wire Cut Multicrystalline Silicon Wafer Texture Surfac[J]. Journal of Inorganic Materials, 2017, 32(9): 985-990.

图/表 10

图1 未腐蚀的砂浆切割(a)和金刚线切割(b)多晶硅片表面的SEM照片

Fig. 1 SEM images of noncorrosive slurry cut (a) and diamond wire cut (b) multicrystalline silicon wafer surfaces

图2 HF、HNO3和H2O的体积比为1︰5︰3, 室温下反应130 s (a)、180 s (b)和280 s (c)得到的多晶硅表面SEM照片

Fig. 2 SEM images of multicrystalline silicon wafer surface after etching at room temperature in the solution with HF: HNO3: H2O = 1︰5︰3 for 130 s (a), 180 s (b) and 280 s (c)

图3 HF、HNO3和H2O的体积比为1︰5︰3, 室温下不同反应时间的多晶硅反射率曲线

Fig. 3 Reflectivity curves of multicrystalline silicon wafer after etching at room temperature in the solution with HF: HNO3: H2O = 1︰5︰3 for different time

图4 HF、HNO3和H2O的体积比为1: 5: 3 (a)、2: 5: 3 (b) 和3: 5: 3 (c) 时, 室温下反应130 s得到的多晶硅表面SEM照片

Fig. 4 SEM images of multicrystalline silicon wafer surface after etching at room temperature in the solution with different volume ratios of HF, HNO3 and H2O (1: 5: 3(a), 2: 5: 3(b) and 3: 5: 3(c)) for 130 s

图5 不同的HF、HNO3和H2O的体积比, 室温下反应130 s得到的多晶硅反射率曲线

Fig. 5 Reflectivity curves of multicrystalline silicon wafer surface after etching with different volume ratios of HF, HNO3 and H2O at room temperature for 130 s

图6 HF、HNO3和H2O的体积比为1: 5: 3(a)、1: 6: 3(b)、1: 8: 3(c)和1: 10: 3(d), 室温下反应130 s多晶硅表面SEM照片

Fig. 6 SEM images of multicrystalline silicon wafer surface after etching at room temperature in the solution with different volume ratios of HF, HNO3 and H2O(1: 5: 3 (a), 1: 6: 3 (b), 1: 8: 3 (c) and 1: 10: 3 (d)) for 130 s

图7 不同的HF、HNO3和H2O的体积比, 室温下反应130s得到的多晶硅反射率曲线

Fig. 7 Reflectivity curves of multicrystalline silicon wafer surface after etching at room temperature in the solution with different volume ratios of HF, HNO3 and H2O for 130 s

图8 氢氟酸浓度为4.6 mol/L, 硝酸银浓度为0.02 mol/L, 室温下反应30 min (a)、60 min (b) 和90 min (c)得到的多晶硅表面SEM照片

Fig. 8 SEM images of multicrystalline silicon wafer surface after etching at room temperature in the solution with HF and AgNO3 concentration of 4.6 mol/L and 0.02 mol/L for 30 min (a), 60 min (b) and 90 min (c)

图9 金属催化化学腐蚀法, 室温下反应不同时间得到的多晶硅反射率曲线

Fig. 9 Reflectivity curves of multicrystalline silicon wafer after etching by metal-catalyzed chemical etching technology at room temperature for different time

图10 不同条件下获得的绒面最优反射率曲线对比图

Fig. 10 Comparison of the most optimal reflectivity curve for the multicrystalline silicon wafer prepared at different conditions

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