Nb改性Bi4Ti3O12高温压电陶瓷的研究

doi:10.3724/SP.J.1077.2010.01169

无机材料学报 ›› 2010, Vol. 25 ›› Issue (11): 1169-1174.DOI: 10.3724/SP.J.1077.2010.01169 CSTR: 32189.14.SP.J.1077.2010.01169

Nb改性Bi₄Ti₃O₁₂高温压电陶瓷的研究

江向平, 杨庆, 陈超, 涂娜, 余祖灯, 李月明

(景德镇陶瓷学院材料工程系, 景德镇333001)

收稿日期:2010-03-11 修回日期:2010-05-23 出版日期:2010-11-20 网络出版日期:2010-11-01
基金资助:
国家自然科学基金(50862005, 51062005, 91022027); 江西省自然科学基金(2008GZC0009)

Nb-modified Bi₄Ti₃O₁₂ Piezoelectric for High Temperature Applications

JIANG Xiang-Ping, YANG Qing, CHEN Chao, TU Na, YU Zu-Deng, LI Yue-Ming

(Department of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333001, China)

Received:2010-03-11 Revised:2010-05-23 Published:2010-11-20 Online:2010-11-01
Supported by:
National Natural Science Foundation of China (50862005, 51062005, 91022027); Jiangxi Natural Science Foundation (2008GZC0009)

摘要/Abstract

摘要： 采用固相法(成型压力~12MPa)获得了Nb改性的Bi₄Ti₃O₁₂(BIT+xmol%Nb2O5)层状压电陶瓷. 研究发现随着Nb₂O₅含量的增加, a-b面取向的晶粒逐渐增多, 晶粒尺寸愈细化与均匀. Nb₂O₅的引入明显降低了BIT系列陶瓷的导电率和介电损耗, 提高了陶瓷的相对密度﹑压电与机电性能. 适量Nb₂O₅(x=4.00)掺杂时, 陶瓷的电导率(~10?13S/cm)比纯BIT的降低了2个数量级, 且该陶瓷的相对密度r=98.7%, tanδ=0.23%, d₃₃=18pC/N, Q_m=2804, k_p=8.1%, k_t=18.6%, N_p=2227Hz·m, N_t=2025Hz·m. BIT+xmol%Nb₂O₅(x=4.00)陶瓷在600℃经退极化处理后, 其d₃₃基本保持不变(~17pC/N), 表明该材料在高温器件领域具有良好的应用前景.

关键词: 压电陶瓷, 微观结构, 机电性能, Bi₄Ti₃O₁₂

Abstract: Nb-modified Bi₄Ti₃O₁₂ (BIT+xmol%Nb₂O₅) layer-structured piezoelectric ceramics were prepared by the solid state reaction method (at the pressure of about 12MPa). The quantity of grain growth along a-b plane is much more than that along c-axis with the increasing amount of Nb₂O₅. After Nb₂O₅doping, the size of grain becomes small and unanimity. The electrical conductivity and dielectric loss are significantly reduced, while relative density, piezoelectric activity and electromechanical properties of Bi₄Ti₃O₁₂-based ceramics are improved by the modification of Nb₂O₅. The electrical conductivity of BIT+4.00mol% Nb₂O₅(10^-13S/cm) decreases by 2 orders of magnitude compared with the undoped one. Besides, the BIT+4.00mol% Nb2O5 ceramic exhibits optimum electrical properties: relative density r=98.7%, tanδ=0.23%, d₃₃=18pC/N, Q_m=2804, k_p=8.1%, k_t=18.6%, N_p=2227Hz·m and N_t=2025Hz·m, and the d₃₃ remains 17pC/N after annealing at 600℃, which indicates that the ceramic is a potential material for high temperature applications.

Key words: piezoelectric ceramics, microstructure, electromechanical properties, Bi₄Ti₃O₁₂

中图分类号:

TQ174

江向平, 杨庆, 陈超, 涂娜, 余祖灯, 李月明. Nb改性Bi₄Ti₃O₁₂高温压电陶瓷的研究[J]. 无机材料学报, 2010, 25(11): 1169-1174.

JIANG Xiang-Ping, YANG Qing, CHEN Chao, TU Na, YU Zu-Deng, LI Yue-Ming. Nb-modified Bi₄Ti₃O₁₂ Piezoelectric for High Temperature Applications[J]. Journal of Inorganic Materials, 2010, 25(11): 1169-1174.

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Nb改性Bi₄Ti₃O₁₂高温压电陶瓷的研究

Nb-modified Bi₄Ti₃O₁₂ Piezoelectric for High Temperature Applications

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