AlN/FeCoSiB磁电复合薄膜的制备及其逆磁电效应研究

doi:10.3724/SP.J.1077.2013.12685

无机材料学报 ›› 2013, Vol. 28 ›› Issue (9): 982-986.DOI: 10.3724/SP.J.1077.2013.12685 CSTR: 32189.14.SP.J.1077.2013.12685

AlN/FeCoSiB磁电复合薄膜的制备及其逆磁电效应研究

童贝, 杨晓非, 林更琪, 陈实, 欧阳君

(华中科技大学光学与电子信息学院, 武汉 430074)

收稿日期:2012-11-12 修回日期:2012-12-20 出版日期:2013-09-20 网络出版日期:2013-08-14
作者简介:童贝(1984-), 男, 博士研究生. E-mail: tongbei@hotmail.com
基金资助:
国家自然科学基金(51172080)

Preparation and Converse Magnetoelectric Effect of AlN/FeCoSiB Magnetoelectric Composite Films

TONG Bei, YANG Xiao-Fei, LIN Geng-Qi, CHEN Shi, OUYANG Jun

(School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, china)

Received:2012-11-12 Revised:2012-12-20 Published:2013-09-20 Online:2013-08-14
About author:TONG Bei. E-mail: tongbei@hotmail.com
Supported by:
National Natural Science Foundation of China (51172080)

摘要/Abstract

摘要： 借助射频磁控溅射成功制备了AlN/FeCoSiB磁电复合薄膜, 探讨了退火条件对AlN薄膜压电性能和FeCoSiB薄膜磁性能的影响, 并研究了其逆磁电响应。结果显示, 500℃退火处理的AlN薄膜具有高度(002)择优取向和柱状生长结构; 经过300℃退火后FeCoSiB薄膜的磁场灵敏度提高。该磁电复合薄膜的逆磁电电压系数(α_CME)在偏置磁场(H_dc)为875 A/m时达到最大值62.5 A/(m·V); 且磁感应强度(B)随交变电压(V_ac)的变化呈现优异的线性响应(线性度达到1.3%)。这种AlN/FeCoSiB磁电复合薄膜在磁场或电场探测领域具有广阔的应用前景。

关键词: 射频磁控溅射, 复合薄膜, 退火, 逆磁电

Abstract: AlN/FeCoSiB magnetoelectric (ME) composite films were prepared by RF magnetron sputtering successfully. The influences of annealing on piezoelectric property of AlN film and magnetic property of FeCoSiB film were discussed. The converse magnetoelectric (CME) response was investigated in detail. The results demonstrate that after annealing at 500℃, the AlN film possesses the highly (002) preferred orientation and typical columnar microstructure. Pronounced magnetic field sensitivity of FeCoSiB film is improved greatly through annealing at 300℃. The CME coefficient (α_CME) reaches the maximum of 62.5 A/(m·V) at the bias magnetic field (H_dc) of 875 A/m. In addition, the magnetic induction (B) has an excellent linear relationship to the driven AC voltage (V_ac) (Linearity of 1.3%). These make the AlN/FeCoSiB ME composite films exhibit promising potential in magnetic and electric field detecting application.

Key words: RF magnetron sputtering, composite film, annealing, converse magnetoelectric

中图分类号:

TQ174

童贝, 杨晓非, 林更琪, 陈实, 欧阳君. AlN/FeCoSiB磁电复合薄膜的制备及其逆磁电效应研究[J]. 无机材料学报, 2013, 28(9): 982-986.

TONG Bei, YANG Xiao-Fei, LIN Geng-Qi, CHEN Shi, OUYANG Jun. Preparation and Converse Magnetoelectric Effect of AlN/FeCoSiB Magnetoelectric Composite Films[J]. Journal of Inorganic Materials, 2013, 28(9): 982-986.

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AlN/FeCoSiB磁电复合薄膜的制备及其逆磁电效应研究

Preparation and Converse Magnetoelectric Effect of AlN/FeCoSiB Magnetoelectric Composite Films

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