退火处理对CsBr:Eu2+光激励发光性能的影响

doi:10.3724/SP.J.1077.2010.00952

无机材料学报 ›› 2010, Vol. 25 ›› Issue (9): 952-956.DOI: 10.3724/SP.J.1077.2010.00952 CSTR: 32189.14.SP.J.1077.2010.00952

退火处理对CsBr:Eu²⁺光激励发光性能的影响

孟佳^1,2, 赵丽丽¹, 吴洁华¹, 宋力昕¹

(1. 中国科学院上海硅酸盐研究所特种无机涂层重点实验室, 上海200050; 2. 中国科学院研究生院, 北京 100049)

收稿日期:2009-11-30 修回日期:2010-04-10 出版日期:2010-09-20 网络出版日期:2010-08-25

Influence of Annealing Process on the Photostimulated Luminescence Properties of CsBr:Eu²⁺

MENG Jia^{1, 2}, ZHAO Li-Li¹, WU Jie-Hua¹, SONG Li-Xin¹

(1. The key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; 2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China)

Received:2009-11-30 Revised:2010-04-10 Published:2010-09-20 Online:2010-08-25

摘要/Abstract

摘要：

采用高温固相烧结法制备了CsBr:Eu²⁺粉体, 系统研究了退火处理后粉体的光激励发光谱、吸收差谱和光激励发光衰减时间等, 发现退火处理能有效提高CsBr:Eu²⁺粉体光激励发光强度, 缩短其发光衰减时间. 重点分析了退火气氛与光激励发光性能之间的关系, 实验结果表明, 退火气氛中的氧取代溴离子Br^-成为替位氧离子O_s^-, 而氢原子将进入间隙位成为间隙氢原子H_i⁰. 替位氧离子O_s^-以及H_i⁰和H_2i⁰都是有效的电子俘获中心, 并且它们与空穴俘获中心的形成密切相关.

关键词: CsBr:Eu²⁺, 光激励发光, 退火, 电子/空穴俘获中心

Abstract:

CsBr:Eu²⁺ powders were prepared by solid-state reaction. The photostimulated luminescence (PSL) spectra, the differential absorption spectra (DAS) and PSL lifetime spectra were systematically investigated. The results reveal the annealing process can increase the PSL intensity and decrease the PSL lifetime. The relationship between the annealing atmosphere and PSL properties were discussed in detail, and the results reveal that substitutional oxygen ions O_s^- (S: substitute, O^- substitute for Br^-) and interstitial hydrogen atoms H_i⁰ are formed in the annealing process. All of O_s^-, H_i⁰and H_2i⁰ are electron trap centers, which are closely related to the formation of hole traps centers.

Key words: CsBr:Eu²⁺, photostimulated luminescence, anneal, electron/hole trap center

中图分类号:

TN304

孟佳, 赵丽丽, 吴洁华, 宋力昕. 退火处理对CsBr:Eu²⁺光激励发光性能的影响[J]. 无机材料学报, 2010, 25(9): 952-956.

MENG Jia, ZHAO Li-Li, WU Jie-Hua, SONG Li-Xin. Influence of Annealing Process on the Photostimulated Luminescence Properties of CsBr:Eu²⁺[J]. Journal of Inorganic Materials, 2010, 25(9): 952-956.

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退火处理对CsBr:Eu²⁺光激励发光性能的影响

Influence of Annealing Process on the Photostimulated Luminescence Properties of CsBr:Eu²⁺

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