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无机材料学报

无机材料学报

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高质量钨酸铅(PWO)晶体的生长

杨培志; 廖晶莹; 沈炳孚; 邵培发; 倪海红; 方全兴; 殷之文   

  1. 中科院上海硅酸盐研究所无机功能材料开放实验室; 上海 200050
  • 收稿日期:2001-03-28 修回日期:2001-05-09 出版日期:2002-03-20 网络出版日期:2002-03-20

Growth of High Quality PWO Single Crystal

YANG Pei-Zhi; LIAO Jing-Ying; SHEN Bing-Fu; SHAO Pei-Fa; NI Hal-Hong; FANG Quan-Xing; YIN Zhi-Wen   

  1. Laboratory of Functional Inorganic Materials; Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China
  • Received:2001-03-28 Revised:2001-05-09 Published:2002-03-20 Online:2002-03-20

PDF (PC)

1010

被引次数

33

摘要： 用改进的垂直坩埚下降法成功地生长了高质量的钨酸铅晶体，晶体毛坯的尺寸为２８ｍｉｎ×２８ｍｍ×３６０ｍｍ；晶体的生长工艺参数为：籽晶取向［００１］；下降速度 ０．６～１．０ｍｍ／ｈ；生长界面附近的温度梯度为２０～３０℃／ｃｍ，加工后的晶体成品在４２０ｎｍ附近的透过率＞６０％；在３６０ｎｍ附近的透过率＞２５％．晶体的光输出＞９ｐ．ｅ／ＭｅＶ；光伤＜５％．

关键词: 钨酸铅晶体, 坩埚下降法, 杂质分析, 闪烁性能

Abstract: High-quality lead tungstate (PWO) single crystals were successfully grown by a modi- fied vertical Bridgman method. The optimal growth parameters selected are as follows: seed crys- tal direction <001 >, lowering rate 0.6~1mm/h, the axial temperature gradient 20-30℃/cm at growth solid-melt boundary. The performances of PWO crystals obtained are as follows: optical transmittance more than 60% at 420nm and more than 25% at 360nm, light yield more than 9 p.e./MeV, light loss less than 5% after irradiation.

Key words: PWO crystal, modified Bridgman method, impurity analysis, scintillation perfor mance

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