GdI3:Ce晶体的生长及其闪烁性能研究

doi:10.15541/jim20160381

无机材料学报 ›› 2017, Vol. 32 ›› Issue (4): 346-350.DOI: 10.15541/jim20160381 CSTR: 32189.14.10.15541/jim20160381

GdI₃:Ce晶体的生长及其闪烁性能研究

叶乐¹, 史坚², 李焕英², 陈晓峰², 黄跃峰³, 徐家跃¹, 任国浩²

(1. 上海应用技术大学材料科学与工程学院, 上海 201418; 2.中国科学院上海硅酸盐研究所, 上海 201800; 3. 中国科学院上海应用物理研究所, 上海 201800)

收稿日期:2016-06-16 修回日期:2016-10-18 出版日期:2017-04-20 网络出版日期:2017-03-24
作者简介:叶乐(1990–), 男, 硕士研究生. E-mail: maxruin@sina.cn
基金资助:
青年科学基金(11305247);国家自然科学基金(51372256)

Growth and Scintillation Properties of GdI₃:Ce Crystal

YE Le^1,2, Shi Jian², Li Huan-Ying², Chen Xiao-Feng², Huang Yue-Feng³, XU Jia-Yue¹, REN Guo-Hao²

(1. School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China; 2.Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China ;3.Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China)

Received:2016-06-16 Revised:2016-10-18 Published:2017-04-20 Online:2017-03-24
About author:YE Le. E-mail: maxruin@sina.cn
Supported by:
National Science Foundation for Young Scientists of China (11305247);National Natural Science Foundation of China (51372256)

摘要/Abstract

摘要：

通过坩埚下降法生长GdI₃:2%Ce及无掺杂GdI₃闪烁晶体, 得到ϕ15 mm×20 mm的晶体毛坯, 从中加工出尺寸分别为12 mm×10 mm×2.5 mm和11 mm×8 mm×2.5 mm的无包裹体、无开裂的晶体样品, 封装后检测该晶体光学性能。XRD分析结果表明: 掺杂晶体GdI₃:2%Ce与无掺杂GdI₃晶体结构相同。X射线激发发射(XEL)和紫外激发发射谱(PL)测试结果显示: GdI₃:2%Ce晶体在450~700 nm有宽带发光峰, 发光峰位分别位于520 nm和550 nm, 对应于Ce³⁺的5d-4f跃迁发光。以550 nm为监控波长, 测得在紫外激发下存在三个激发峰, 分别位于262、335和440 nm。GdI₃:2%Ce晶体在¹³⁷Cs源伽马射线(662 keV) 激发下能量分辨率为3.4%, 通过高斯拟合得到的衰减时间为58±3 ns。研究表明, GdI₃:2%Ce晶体是一种良好的伽马和中子探测材料, 具有广泛的应用前景。

关键词: GdI3:2%Ce晶体, 坩埚下降法, 闪烁性能

Abstract:

Gadolinium iodide doped with Cerium (GdI₃:2%Ce) and undoped gadolinium iodide (GdI₃) crystals were grown by vertical Bridgman method with sealed quartz crucible. Crystal ingots with dimension of ϕ15 mm×20 mm were cut and polished to be plates of 12 mm×10 mm×2.5 mm and 11 mm×8 mm×2.5 mm. GdI₃:2%Ce without crack and inclusion were encapsulated for all the measurements. X-ray diffraction analysis shows that the Ce³⁺-doped GdI₃ and undoped GdI₃ crystal have the same structure. X-ray and ultraviolet excited luminescence spectra of GdI₃:2%Ce present broad emission bands peaking at 520 nm and 550 nm, respectively, which correspond to 5d-4f transition luminescence of Ce³⁺. Three peaks located at 262, 335 and 440 nm can be observed in excitation spectra when photoluminescence is monitored at 550 nm. The GdI₃:2%Ce crystal presents an excellent energy resolution of 3.4% and decay time of (58±3) ns under excitation of 662 keV gamma-rays from ¹³⁷Cs source. The results show the GdI₃:2%Ce crystal is a promising scintillator for gamma ray and neutron detection.

Key words: GdI3:2%Ce crystal, Bridgman method, scintillation property

中图分类号:

TQ174

叶乐,史坚, 李焕英, 陈晓峰, 黄跃峰, 徐家跃, 任国浩. GdI₃:Ce晶体的生长及其闪烁性能研究[J]. 无机材料学报, 2017, 32(4): 346-350.

YE Le, Shi Jian, Li Huan-Ying, Chen Xiao-Feng, Huang Yue-Feng, XU Jia-Yue, REN Guo-Hao. Growth and Scintillation Properties of GdI₃:Ce Crystal[J]. Journal of Inorganic Materials, 2017, 32(4): 346-350.

图/表 8

图1 (a)未封装和(b)封装后GdI3: 2%Ce晶体样品的照片

Fig. 1 Photoes of samples of GdI3: 2%Ce crystal (a) without encapsulation and (b) after encapsulation

图2 纯GdI3和GdI3: 2%Ce晶体粉末的XRD图谱

Fig. 2 XRD patterns of GdI3 and GdI3: 2%Ce crystal powder

图3 纯GdI3晶体和GdI3: 2%Ce的XEL光谱

Fig. 3 XEL spectra of pure GdI3 and GdI3: 2%Ce crystals

图4 纯GdI3样品激发和发射谱

Fig. 4 Photoluminescence excitation and emission spectra of pure GdI3 crystal

图5 GdI3: 2%Ce样品激发(λem= 520、550 nm)和发射谱(λex=262、335、450 nm)

Fig. 5 Photoluminescence excitation spectra monitored at 520、550 nm and emission spectra(λex=262, 335, 450 nm) of GdI3: 2%Ce crystal

表1 GdI3: 2%Ce与CsI: Tl样品多道能谱对比

Table1 Pulse height spectra of GdI3: 2%Ce with CsI: Tl crystal for comparison

Sample	Size/mm	Shaping time/μs	Dead time	Peak/nm	FWHM	E.R./%
GdI₃: 2%Ce	11×8×2.5	3	≤4%	303.20	10.25	3.4
CsI: Tl	Φ 25.4×25.4	3	≤13%	489.16	38.25	7.8

图6 GdI3: 2%Ce样品和CsI: Tl标样在137Cs激发下的多道能谱

Fig. 6 Pulse height spectra of GdI3: 2%Ce crystal and CsI: Tl crystal excited by 137Cs

图7 室温下GdI3: 2%Ce晶体在137Cs源伽马射线激发下衰减时间曲线

Fig. 7 Decay curve and its fitted line of GdI3: 2%Ce crystal excited by 137Cs Gamma-ray at room temperature

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GdI₃:Ce晶体的生长及其闪烁性能研究

Growth and Scintillation Properties of GdI₃:Ce Crystal

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