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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

KTiOAsO4晶体的生长缺陷研究

牟其善1; 刘希玲1; 马长勤2; 王绪宁2; 路庆明2   

  1. 1. 山东教育学院数理系， 250013; 山东大学晶体材料国家实验室， 济南 250100; 2。 山东大学化学院， 济南 250100
  • 收稿日期:1999-08-23 修回日期:1999-09-13 出版日期:2000-08-20 网络出版日期:2000-08-20

Research on the Growth Defects of KTiOAsO4 Crystal

MOU Qi-Shan1; LIU Xi-Ling1; MA Chang-Qin2; WANG Xu-Ning2; LU Qing-Ming 2   

  1. 1.Department of Math and Physics; Shandong Institute of Education; 250013; National Crystal Materials Laboratory; Shandong Universityl Jinan 250100; China;2. Institute of Chemistry; Shandong University, Jinan 250100, China
  • Received:1999-08-23 Revised:1999-09-13 Published:2000-08-20 Online:2000-08-20

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摘要： 研究ＫＴｉＯＡｓＯ4晶体的生长缺陷，对于改善它的性能和应用前景，有很大的意义．本文利用化学腐蚀光学显微术和同步辐射Ｘ射线形貌术研究了ＫＴｉＯＡｓＯ４晶体的缺陷，实验结果表明，两种腐蚀剂对于显示ＫＴＡ晶体的表面缺陷效果显著，ＫＴＡ晶体中主要的缺陷有铁电畴、生长层、扇形界、位错和包裹物．讨论了这些缺陷形成的原因。

关键词: KTiOAsO4晶体, 同步辐射X射线形貌术, 缺陷, 铁电畴

Abstract: It is significant to research the growth defects of KTiOAsO4 crystal in order to improve its physical properties and applications. The growth defects of KTA were studied by the methods of optical micrography and synchrotron radiation topography. The result indicates that two kinds of etchant produce a marked effect to show the defects of KTA crystal, and the main defects in KTA crystal are ferroelectric domain, growth striation, sector boundary, dislocation and inclusion. The forming cause of the defects was also discussed.

Key words: KTiOAsO4 crystal, synchrotron radiation topography, defect, ferroelectric domain

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