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无机材料学报

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不同掺杂浓度的Gd2O2S:Tb闪烁陶瓷的制备、微观结构与光学性能

黄东1, 吴俊林1,2, 胡辰1,2, 王雁斌1,2, 陈宇洋1,2, 李廷松1,2, 杨文钦3,4, 蒋兴奋3,4, 周健荣3,4, 孙志嘉3,4, 李江1,2   

  1. 1.中国科学院 上海硅酸盐研究所,关键陶瓷材料全国重点实验室,上海 201899;
    2.中国科学院大学 材料科学与光电工程中心,北京 100049;
    3.散裂中子源科学中心,广东东莞 523803;
    4.中国科学院 高能物理研究所,北京 100049
  • 收稿日期:2025-10-22 修回日期:2026-01-28
  • 通讯作者: 胡辰, 副研究员. E-mail: huchen@mail.sic.ac.cn; 李江, 研究员. E-mail: lijiang@mail.sic.ac.cn
  • 作者简介:黄东(1994-), 男, 硕士. E-mail: huangdong@mail.sic.ac.cn

Fabrication, Microstructure and Optical Properties of Gd2O2S:Tb Scintillation Ceramics with Different Doping Concentrations

HUANG Dong1, WU Junlin1,2, HU Chen1,2, WANG Yanbin1,2, CHEN Yuyang1,2, LI Tingsong1,2, YANG Wenqin3,4, JIANG Xingfen3,4, ZHOU Jianrong3,4, SUN Zhijia3,4, LI Jiang1,2   

  1. 1. State Key Laboratory of High Performance Ceramics, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China;
    2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    3. Spallation Neutron Source Science Center, Dongguan 523803, China;
    4. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • Received:2025-10-22 Revised:2026-01-28
  • Contact: HU Chen, associate professor. E-mail: huchen@mail.sic.ac.cn; LI Jiang, professor. E-mail: lijiang@mail.sic.ac.cn
  • About author:HUANG Dong (1994-), male, Master. E-mail: huangdong@mail.sic.ac.cn
  • Supported by:
    Advanced Materials-National Science and Technology Major Project (2024ZD0605900); National Natural Science Foundation of China (12175254); Guangdong Provincial Key Laboratory of Advanced Particle Detection Technology (2024B1212010005)

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摘要： 本工作通过水浴法合成Gd2O2S:Tb粉体,并采用真空预烧结合热等静压烧结后处理工艺,制备了不同掺杂浓度的Gd2O2S:Tb闪烁陶瓷。研究了掺杂浓度对Gd2O2S:Tb陶瓷的微观结构和光学性能的影响。结果表明,随着掺杂浓度的增加,Gd2O2S:Tb陶瓷的晶格参数减小。不同掺杂浓度的Gd2O2S:Tb陶瓷的总光学透过率变化不大,主要是由于第二相的影响。随着掺杂浓度的增加,光致发光(Photoluminescence, PL)衰减时间从617 μs减少至576 μs,原因是Tb3+之间的非辐射弛豫。Gd2O2S:Tb陶瓷的PL和X射线激发发射光谱(X-ray excited luminescence, XEL)表现出较强的浓度猝灭现象。掺杂浓度为3.5%(原子百分数)时,Gd2O2S:Tb陶瓷具有最高的稳态XEL强度,光输出为37500 ph/MeV。不同掺杂浓度的Gd2O2S:Tb陶瓷在50 ms后的余辉变化较小,范围为0.1%~0.3%。

关键词: 水浴法, Gd2O2S:Tb陶瓷, 掺杂浓度, 闪烁性能

Abstract: The Gd2O2S:Tb scintillation ceramics with different doping concentrations were prepared using the powders synthesized by the water-bath method, through vacuum pre-sintering followed by hot isostatic pressing post-treatment. The influence of doping concentration on the microstructure and optical properties of Gd2O2S:Tb ceramics was investigated. The lattice parameter of Gd2O2S:Tb ceramics decreases with the increase in doping concentrations. The total optical transmittance of Gd2O2S:Tb ceramics with different doping concentrations does not vary much due to the secondary phase. With the increase in doping concentration, the photoluminescence (PL) decay time decreases from 617 μs to 576 μs, which is caused by the non-radiative relaxation among Tb³⁺ ions. The PL and X-ray excited luminescence (XEL) of Gd2O2S:Tb ceramics exhibit the high concentration quenching phenomenon. The 3.5% Gd2O2S:Tb (in atomic percent) ceramics have the highest steady-state XEL intensity with a light output of 37500 ph/MeV. The afterglow of Gd2O2S:Tb ceramics with different concentrations varies little in the range of 0.1% to 0.3% at 50 ms.

Key words: water-bath method, Gd2O2S:Tb ceramics, doping concentration, scintillation property

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