Zn-Sb双掺杂Mg2(Si,Sn)合金的热电性能

doi:10.15541/jim20180388

摘要/Abstract

摘要：

Mg₂(Si,Sn)合金热电材料具有成本低廉、环境友好等优点, 作为一种绿色环保的中温区热电材料一直受到广泛关注。在Mg₂(Si,Sn)基材料中掺杂大剂量Sb可诱发Mg空位, 从而有效降低材料的热导率, 但同时Seebeck系数也会降低。研究采用高温熔炼及真空热压法成功合成了Mg_2.12-_ySi_0.4Sn_0.5Sb_0.1Zn_y (y=0~0.025)试样, 通过在大剂量Sb掺杂的Mg₂(Si,Sn)基材料中添加Zn元素, 研究了大剂量Sb和微量Zn双掺杂对材料电声输运特性的综合影响。研究结果表明, Zn-Sb双掺杂可通过有效抑制材料电子热导率的方法大幅降低Mg₂(Si,Sn)合金材料的总热导率, 与此同时明显提高掺Zn试样的塞贝克系数以弥补其电导率的损失, 维持材料较为优异的电学性能。最终, 热导率的大幅优化及电学性能的维持实现了材料综合热电性能的显著提升, 其中, 成分为Mg_2.095Si_0.4Sn_0.5Sb_0.1Zn_0.025的材料在823 K下热电优值ZT达到1.42。

关键词: 热电材料, Mg₂(Si, Sn)合金, Zn-Sb双掺杂, 热电优值

Abstract:

As a type of medium-temperature thermoelectric materials, Mg₂(Si,Sn) alloy thermoelectric materials have been widely concerned because of the low cost and environmental friendliness. Heavily Sb doping can effectively induce Mg vacancy so as to reduce the thermal conductivity in Mg₂(Si,Sn)-based materials, but at the same time lead to a decrease of Seebeck coefficient. In this study, high-quality Mg_2.12-_ySi_0.4Sn_0.5Sb_0.1Zn_y (y=0-0.025) samples were successfully synthesized by high temperature melting and vacuum hot-pressing method. Zn element was introduced into the heavily Sb-doped Mg₂(Si,Sn) material to investigate the double doping effect on the electroacoustic transport properties. The results show that Zn-Sb double doping could effectively reduce the total thermal conductivity of Mg₂(Si,Sn)-based materials by obviously suppressing the electronic thermal conductivity and at the same time enhance the Seebeck coefficient of Zn-doped samples, so as to compensate for the loss of electrical conductivity, and maintain high electrical performance. Significantly optimized thermal conductivity and electrical performance ultimately improve the thermoelectric figure of meritZT of the material. At 823 K, the maximum ZT of Mg_2.095Si_0.4Sn_0.5Sb_0.1Zn_0.025 reached 1.42.

Key words: thermoelectric materials, Mg₂(Si, Sn) alloy, zinc-antimony doping, figure of merit

中图分类号:

TB381

余冠廷, 忻佳展, 朱铁军, 赵新兵. Zn-Sb双掺杂Mg₂(Si,Sn)合金的热电性能[J]. 无机材料学报, 2019, 34(3): 310-314.

YU Guan-Ting, XIN Jia-Zhan, ZHU Tie-Jun, ZHAO Xin-Bing. Thermoelectric Property of Zn-Sb Doped Mg₂(Si,Sn) Alloys[J]. Journal of Inorganic Materials, 2019, 34(3): 310-314.

图/表 5

图1 Mg2.12-ySi0.4Sn0.5Sb0.1Zny (y=0~0.025)的XRD图谱

Fig.1 XRD patterns of Mg2.12-ySi0.4Sn0.5Sb0.1Zny (y=0-0.025)

图2 Mg2.12-ySi0.4Sn0.5Sb0.1Zny试样的背散射SEM照片

Fig.2 Backscattered SEM images of Mg2.12-ySi0.4Sn0.5Sb0.1Zny(a) y=0.015; (b)y=0.025

图3 Mg2.12-ySi0.4Sn0.5Sb0.1Zny (y=0~0.025)的电学性能随温度的变化关系

Fig.3 Temperature dependences of electrical properties of Mg2.12-ySi0.4Sn0.5Sb0.1Zny (y=0-0.025)(a) Electrical conductivity; (b) Seebeck coefficient; (c) Power factor

图4 Mg2.12-ySi0.4Sn0.5Sb0.1Zny(y=0~0.025)的热导率随温度变化的关系曲线

Fig.4 Temperature dependences of thermal properties of Mg2.12-ySi0.4Sn0.5Sb0.1Zny(y=0-0.025)(a) Total thermal conductivity; (b) Lattice thermal conductivity

图5 Mg2.12-ySi0.4Sn0.5Sb0.1Zny(y=0~0.025)热电优值ZT随温度的变化曲线

Fig.5 Temperature dependences of figure of merit ZT for Mg2.12-ySi0.4Sn0.5Sb0.1Zny(y=0-0.025)

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Zn-Sb双掺杂Mg₂(Si,Sn)合金的热电性能

Thermoelectric Property of Zn-Sb Doped Mg₂(Si,Sn) Alloys

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