无机材料学报 ›› 2016, Vol. 31 ›› Issue (6): 647-651.DOI: 10.15541/jim20150500 CSTR: 32189.14.10.15541/jim20150500

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Ce、Pr共掺LSO多晶薄膜的溶胶-凝胶法制备及其发光性能

张晓欣1, 谢建军1, 范灵聪1, 林德宝1, 陈 旭2, 施 鹰1   

  1. (上海大学1. 材料科学与工程学院; 2. 生命科学学院, 上海 200444)
  • 收稿日期:2015-10-14 修回日期:2015-12-04 出版日期:2016-06-20 网络出版日期:2016-05-19
  • 作者简介:张晓欣(1987–), 男, 硕士研究生. E-mail: zhangxx0914@163.com
  • 基金资助:
    上海市科委科技基金(14520500300);国家自然科学基金(51172139)

Fabrication and Luminescence Properties of Polycrystalline Ce, Pr Co-doped LSO Thin Films by Sol-Gel Method

ZHANG Xiao-Xin1, XIE Jian-Jun1, FANG Ling-Cong1, LIN De-Bao1, CHEN Xu2, SHI Ying1   

  1. (1. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China; 2. School of Life Sciences, Shanghai University, Shanghai 200444, China)
  • Received:2015-10-14 Revised:2015-12-04 Published:2016-06-20 Online:2016-05-19
  • About author:ZHANG Xiao-Xin. E-mail: zhangxx0914@163.com
  • Supported by:
    Shanghai Committee of Science and Technology, China (14520500300);National Natural Science Foundation of China (51172139)

摘要:

采用溶胶-凝胶法结合旋涂工艺在单晶硅(111)上制备了Ce3+、Pr3+共掺杂的硅酸镥(Lu2SiO5)薄膜, 采用X射线衍射(XRD)、扫描电镜(SEM)和荧光光谱(PL)对(Ce,Pr):Lu2SiO5薄膜的物相、表面形貌及发光性质进行了研究和表征。结果表明: 薄膜样品在1000℃下形成了A-Lu2SiO5纯相; 在1100℃下形成了B-Lu2SiO5纯相。经1100℃煅烧后, 通过SEM可以观察到薄膜表面均匀、平整、无裂纹, 晶粒大小为200~300 nm, 旋涂10层的薄膜厚度约为320 nm。从PL谱中可以发现: 在共掺杂体系里, Pr3+在跃迁过程中, 有一部分能量传递给Ce3+离子, 使Ce3+产生特征能级跃迁, 并且使Ce3+发射强度比单掺杂Ce3+时的发射强度更强。

关键词: 溶胶-凝胶法, LSO薄膜, 发光, 旋涂法, Ce3+, Pr3+共掺杂

Abstract:

Lutetium oxyorthosilicate (Lu2SiO5, LSO) films co-doped with Ce3+ and Pr3+ was synthesized on cleaned silicon (111) substrates by Sol-Gel route with a spin-coating technique. XRD patterns indicated that the films were crystallized into A-type Lu2SiO5 phase at 1000℃, followed by a phase transition to B-type Lu2SiO5 at 1100℃. SEM observations revealed that the surface of the films was smooth, homogeneous and crack-free when the samples were calcined under 1100℃. The average grain size of the crystal particles was 200-300 nm and the thickness of the thin film was about 320 nm when the coating layer number up to 10. The energy transference from Pr3+ to Ce3+ in Lu2SiO5 host was observed and discussed. The luminescence intensity of Ce3+ can be improved after Pr3+ co-doping.

Key words: Sol-Gel, Lu2SiO5 films, luminescence, spin-coating method, Ce3+, Pr3+ co-doping

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