Ce、Pr共掺LSO多晶薄膜的溶胶-凝胶法制备及其发光性能

doi:10.15541/jim20150500

无机材料学报 ›› 2016, Vol. 31 ›› Issue (6): 647-651.DOI: 10.15541/jim20150500

Ce、Pr共掺LSO多晶薄膜的溶胶-凝胶法制备及其发光性能

张晓欣¹, 谢建军¹, 范灵聪¹, 林德宝¹, 陈旭², 施鹰¹

(上海大学1. 材料科学与工程学院; 2. 生命科学学院, 上海 200444)

收稿日期:2015-10-14 修回日期:2015-12-04 出版日期:2016-06-20 网络出版日期:2016-05-19
作者简介:张晓欣(1987–), 男, 硕士研究生. E-mail: zhangxx0914@163.com
基金资助:
上海市科委科技基金(14520500300);国家自然科学基金(51172139)

Fabrication and Luminescence Properties of Polycrystalline Ce, Pr Co-doped LSO Thin Films by Sol-Gel Method

ZHANG Xiao-Xin¹, XIE Jian-Jun¹, FANG Ling-Cong¹, LIN De-Bao¹, CHEN Xu², SHI Ying¹

(1. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China; 2. School of Life Sciences, Shanghai University, Shanghai 200444, China)

Received:2015-10-14 Revised:2015-12-04 Published:2016-06-20 Online:2016-05-19
About author:ZHANG Xiao-Xin. E-mail: zhangxx0914@163.com
Supported by:
Shanghai Committee of Science and Technology, China (14520500300);National Natural Science Foundation of China (51172139)

摘要/Abstract

摘要：

采用溶胶-凝胶法结合旋涂工艺在单晶硅(111)上制备了Ce³⁺、Pr³⁺共掺杂的硅酸镥(Lu₂SiO₅)薄膜, 采用X射线衍射(XRD)、扫描电镜(SEM)和荧光光谱(PL)对(Ce,Pr):Lu₂SiO₅薄膜的物相、表面形貌及发光性质进行了研究和表征。结果表明: 薄膜样品在1000℃下形成了A-Lu₂SiO₅纯相; 在1100℃下形成了B-Lu₂SiO₅纯相。经1100℃煅烧后, 通过SEM可以观察到薄膜表面均匀、平整、无裂纹, 晶粒大小为200~300 nm, 旋涂10层的薄膜厚度约为320 nm。从PL谱中可以发现: 在共掺杂体系里, Pr³⁺在跃迁过程中, 有一部分能量传递给Ce³⁺离子, 使Ce³⁺产生特征能级跃迁, 并且使Ce³⁺发射强度比单掺杂Ce³⁺时的发射强度更强。

关键词: 溶胶-凝胶法, LSO薄膜, 发光, 旋涂法, Ce3+, Pr3+共掺杂

Abstract:

Lutetium oxyorthosilicate (Lu₂SiO₅, LSO) films co-doped with Ce³⁺ and Pr³⁺ was synthesized on cleaned silicon (111) substrates by Sol-Gel route with a spin-coating technique. XRD patterns indicated that the films were crystallized into A-type Lu₂SiO₅ phase at 1000℃, followed by a phase transition to B-type Lu₂SiO₅ at 1100℃. SEM observations revealed that the surface of the films was smooth, homogeneous and crack-free when the samples were calcined under 1100℃. The average grain size of the crystal particles was 200-300 nm and the thickness of the thin film was about 320 nm when the coating layer number up to 10. The energy transference from Pr³⁺ to Ce³⁺ in Lu₂SiO₅ host was observed and discussed. The luminescence intensity of Ce³⁺ can be improved after Pr³⁺ co-doping.

Key words: Sol-Gel, Lu2SiO5 films, luminescence, spin-coating method, Ce3+, Pr3+ co-doping

中图分类号:

TQ174

张晓欣, 谢建军, 范灵聪, 林德宝, 陈旭, 施鹰. Ce、Pr共掺LSO多晶薄膜的溶胶-凝胶法制备及其发光性能[J]. 无机材料学报, 2016, 31(6): 647-651.

ZHANG Xiao-Xin, XIE Jian-Jun, FANG Ling-Cong, LIN De-Bao, CHEN Xu, SHI Ying. Fabrication and Luminescence Properties of Polycrystalline Ce, Pr Co-doped LSO Thin Films by Sol-Gel Method[J]. Journal of Inorganic Materials, 2016, 31(6): 647-651.

图/表 8

图1 共掺杂LSO薄膜在不同温度下煅烧2 h的XRD图谱

Fig. 1 XRD patterns of the LSO films calcined of different temperatures for 2 h

图2 共掺杂LSO薄膜的断面(a)和表面(b)SEM照片

Fig. 2 SEM images of cross-section (a) and surface (b) morphology of the film

图3 掺杂稀土离子的淬灭浓度

Fig. 3 Quenching concentration of rare earth ions. (a) Ce3+, λex=358 nm; (b) Pr3+, λex=250 nm

图4 单一稀土离子掺杂LSO薄膜的激发和发射光谱图

Fig. 4 Photoluminescence spectra of the LSO films with single rare earth ions. (a) Ce:LSO film; (b) Pr:LSO film

表1 单掺杂Ce3+离子、Pr3+离子的LSO薄膜的激发和发射波长

Table 1 Excitation and emission wavelengths of LSO film with single rare earth ions doped with Ce3+ or Pr3+

	Ex-wavelength/nm			Em-wavelength/nm
Ce³⁺ doping	265	298	358	400	422
Pr³⁺ doping	250			280	320

图5 Ce3+(0.2mol%)、Pr3+(0.4mol%)共掺杂时LSO薄膜的发射光谱图

Fig. 5 Emission spectra of LSO films co-doped with Ce3+ (0.2mol%) and Pr3+ (0.4mol%)

图6 单掺杂与共掺杂时Ce3+发射强度对比图

Fig. 6 Comparison chart of Ce3+ emission intensities when Ce3+ single doped and co-doped with Pr3+

图7 Ce3+、Pr3+共掺杂时能量转换示意图及可能的两种能量传递方式

Fig. 7 Schematic diagram of the energy transmission co-doped with Ce3+ and Pr3+ in LSO thin films and two possible energy transfer ways from Pr3+ to Ce3+

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Ce、Pr共掺LSO多晶薄膜的溶胶-凝胶法制备及其发光性能

Fabrication and Luminescence Properties of Polycrystalline Ce, Pr Co-doped LSO Thin Films by Sol-Gel Method

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