Journal of Inorganic Materials ›› 2015, Vol. 30 ›› Issue (1): 35-40.DOI: 10.15541/jim20140182

• Orginal Article • Previous Articles     Next Articles

Effect of Vacuum Rapid Annealing Treatment on Performance of CIGS Solar Cells

TIAN Li1, ZHANG Xiao-Yong2, MAO Qi-Nan2, LI Xue-Geng2, YU Ping-Rong1, WANG Dong1   

  1. (1. College of Engineering, Peking University, Beijing 100871, China; 2. Optony Inc., Hangzhou 310051, China)
  • Received:2014-04-14 Revised:2014-06-20 Online:2015-01-20 Published:2014-12-29
  • About author:TIAN Li. E-mail:
  • Supported by:
    National High Technology Research and Development Program of China (2012AA050702, 2013AA050904);National Basic Research Program of China (2011CB933300, 2013CB934004);National Natural Science Foundation of China (21371016);National Key Technology Research and Development Program of Uinistry of Science and Technology of China (2011BAK16B01)


CIGS absorber layers were prepared by sequential sputtering/selenization method. Based on that, CIGS solar cells were fabricated with a structure of glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Ni-Al grid. The influences of annealing treatment on the performance of CIGS solar cells were investigated. By optimizing annealing condition, the cell efficiency increased from 4.91% to 14.01%. Further investigation revealed that the post-annealing treatment had two advantages. Firstly, it facilitated the diffusion of Cd ions into CIGS surface to substitute the Cu vacancies. Thus, the surface of CIGS converted from p-type to n-type conduction, leading to the shift of p-n junction from CIGS/CdS interface into the CIGS layer. Therefore, the recombination centers at the p-n junction were greatly reduced. Secondly, most H2O molecules being adsorbed on the CIGS surface were eliminated by annealing, which improved the uniformity of electrical properties and band-gap of CIGS layer, resulting better performance of CIGS solar cell.

Key words: CuInxGa1-xSe, annealing, sputtering/selenization sequential method, uniformity, homojunction

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