Journal of Inorganic Materials ›› 2016, Vol. 31 ›› Issue (10): 1068-1072.DOI: 10.15541/jim20160221

• Orginal Article • Previous Articles     Next Articles

Growth and Thermo-luminescence Properties of Dy: Bi4Si3O12 Crystals

WANG Mei-Ling, XU Jia-Yue, ZHANG Yan, CHU Yao-Qing, YANG Bo-Bo, SHEN Hui, TIAN Tian   

  1. (School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China)
  • Received:2016-04-01 Revised:2016-05-17 Online:2016-10-20 Published:2016-09-23
  • About author:WANG Mei-Ling. E-mail: wmllvme@qq.com
  • Supported by:
    National Natural Science Foundation of China(51342007, 51572175)

Abstract:

Dy3+ doped Bi4Si3O12 (BSO) crystals were grown by the vertical Bridgman method with doping contents of 0.1mol%, 0.2mol%, 0.3mol%, 2mol%, 3mol% and 4 mol%. It was found that the crystallization behavior was modified by heavy doping and the surface precipitated phase disappeared gradually with the dopant content increase. The maximum light yield of the BSO crystals doped with 0.1mol% Dy3+ was up to 145% of that of pure BSO. The thermo-luminescence (TL) spectra showed that the intensity of TL peaks increased slightly and Dy3+ doping is helpful to light yield when doping content is less than 0.3mol%. However, it induced more defects when the dopant content was larger than 2mol%. High doping may lead to competitive luminescence between Dy3+ ions and Bi3+ ions, resulting in decrease of light yield.

Key words: Bi4Si3O12, crystal growth, Dy3+ doping, thermoluminescence, light yield

CLC Number: