Microstructure and Optical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited by Helicon Wave Plasma Enhanced Chemical Vapor Deposition

Abstract

Abstract: The atomic configurations and optical properties of hydrogenated amorphous silicon nitride (a-SiN_x:H)
films deposited by helicon wave plasma enhanced chemical vapor deposition (HWP-CVD) were analyzed by using Fourier transform infrared (FTIR)
spectroscopy and ultraviolet-visible (UV-VIS) spectroscopy. The results reveal that the films show different Si/N ratio and hydrogen bonding mode
at the various ratio between the silicon and nitrogen containing gases (R), For nitride-rich samples, hydrogen has a chemical preference to
bind to nitride. On the other hand, for silicon-rich samples, hydrogen atoms bind preferentially to silicon. The optical band gap, E_g
and E₀₄ of a-SiN_x:H films decrease gradually with the increase of R, which is attributed to the increase of disorder degree of the
a-SiN_x:H film microstructure. Additionally, the correlation between (E₀₄--E_g) and the slop of Tauc plot, B for the a-SiN_x:H
films is established.

Key words: silicon nitride films, optical property, helicon wave plasma enhanced chemical vapor deposition

CLC Number:

O484， TB43

YU Wei,HOU Hai-Hong,HE Jie,WANG Hua-Ying,FU Guang-Sheng. Microstructure and Optical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited by Helicon Wave Plasma Enhanced Chemical Vapor Deposition[J]. Journal of Inorganic Materials.

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Microstructure and Optical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited by Helicon Wave Plasma Enhanced Chemical Vapor Deposition

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