Abstract: Combustion synthesis of α-Si₃N₄ was carried out through a chemical activation method under controlled temperature. Temperature profile analysis
was carried out to determine the kinetics of combustion synthesis of α-Si₃N₄. The kinetic parameters included the combustion
wave velocity, the rate of temperature increase, the adiabatic temperature rise, the inert temperature rise time and the inert temperature decay
time, as well as the convention ratio of Si to Si₃N₄. Two methods, i. e., temperature profile analysis method and wave velocity method were
used to calculate the activation energy of combustion reaction of silicon in pressurized nitrogen. The kinetics analysis will provide guideline for
understanding the reaction mechanism and optimizing the processing parameters.

Key words: α-Si₃N₄, combustion synthesis, kinetics, activation energy