Simulation of Gas Phase Chemistry in C-H-O and C-H-N Systems for Chemical Vapor Deposition Diamond Films

Abstract

Abstract: Gas phase chemistry in C-H-O and C-H-N systems was simulated. Phase diagrams for chemical vapor
deposition diamond films with oxygen-containing and nitrogen-containing feed gases were successfully constructed. The influences of oxygen and
nitrogen addition on diamond growth were also discussed. It is shown methyl is the dominant diamond growth precursor, acetylene contributes to
non-diamond carbon deposition and atomic hydrogen etches non-diamond carbon. Oxygen addition varies the concentrations of these radicals, which influences
diamond growth. Nitrogen addition varies their concentrations as well as produces nitrogen-containing radicals such as CN, which participate in
surface chemistry in diamond nucleation and growth.

Key words: chemical vapor deposition, diamond films, gas phase chemistry, phase diagram

CLC Number:

TQ163

QI Xue-Gui,CHEN Ze-Shao,WANG Guan-Zhong,LIAO Yuan. Simulation of Gas Phase Chemistry in C-H-O and C-H-N Systems for Chemical Vapor Deposition Diamond Films[J]. Journal of Inorganic Materials.

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