Silicon Carbon Nitride Films Grown by Hot-Filament Chemical Vapor Deposition

Journal of Inorganic Materials

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Silicon Carbon Nitride Films Grown by Hot-Filament Chemical Vapor Deposition

NIU Xiao-Bin^1,2; LIAO Yuan^1,2; CHANG Chao^1,2; YU Qing-Xuan²; FANG Rong-Chuan²

1.Structure Research Laboratory; University of Science and Technology of China; Hefei 230026; China; 2.Department of Physics; University of Science and Technology of China; Hefei 230026; China

Received:2003-03-25 Revised:2003-05-26 Published:2004-03-20 Online:2004-03-20

Abstract

Abstract: The silicon carbon nitride (SiCN) films were successfully synthesized on silicon substrate using SiH₄/CH₄/
H₂/N₂ mixture by hot-filament chemical vapor deposition (HFCVD) without bias. The resultant films consist of many micro-rods with mean diameter about
3μm and lengths up to 35 μm measured by SEM, and the micro-rods are built with blocks of nanocrystalline SiCN grown in amorphous matrix observed
by HRTEM. Further SAED and XRD analysis indicate that the structure of SiCN nanocrystal is similar to that of α-Si₃N₄ with small deviations.
XPS and FTIR were employed to investigate the compositions of SiCN films, indicating the presence of Si, C, N, O and H, and a chemical bonding network
of C=N, N-Si and N-C bonds in SiCN films, but the C-Si bonds absent. From these results, we suggest that the SiCN growth may mainly include two
processes: the growth of α-Si₃N₄ clusters and the substitution of Si atoms by C atoms.

Key words: HFCVD, SiCN films, α-Si₃N₄

CLC Number:

TB43

NIU Xiao-Bin,LIAO Yuan,CHANG Chao,YU Qing-Xuan,FANG Rong-Chuan. Silicon Carbon Nitride Films Grown by Hot-Filament Chemical Vapor Deposition[J]. Journal of Inorganic Materials.

References

[1] Cohen M L. Phys. Rev. B, 1985, 32 (12): 7988--7991.
[2] Liu A Y, Cohen M L. Science, 1989, 245: 841--842.
[3] Wang E G. Progress in Materials Science, 1997, 41: 241--246.
[4] Wei J. J. Appl. Phys., 2001, 89 (7): 4099--4104.
[5] Fujii T, Muraki J, Arulmozhiraja S, et al. J. Appl. Phys., 2000, 88 (10): 5592--5596.
[6] Barucca G, Majni G, Mengucci P, et al. J. Appl. Phys., 2001, 89 (6): 3494--3497.
[7] Chen L C, Yang C Y, Bhusari D M, et al. Diamond Relat. Mater., 1996, 5: 514--518.
[8] Gomez F J, Prieto P, Elizalde E, et al. Appl. Phys. Lett., 1996, 69: 773--775.
[9] Chen K H, Wu J -J, Wen C Y, et al. Thin Solid Films, 1999, 355-356: 205--209.
[10] Viera G, Andujar J L, Sharma S N, et al. Diamond Relat. Mater., 1998, 7: 407--411.
[11] Xiao X -C, Li Y -W, Song L -X, et al. Appl. Surf. Sci., 2000, 156: 155--160.
[12] Machorro R, Samano E C, Soto G, et al. Appl. Surf. Sci., 1998, 127-129: 564--568.
[13] Nakaaki I, Saito N. Appl. Surf. Sci., 2001, 169-170: 468--471.
[14] Riedel R, Greiner A, Miehe G, et al. Ang. Chem. Int. Ed. Engl., 1997, 36: 603--606.
[15] Chen L C, Chen K H, Wei S L, et al. Thin Solid Films, 1999, 355-356: 112--116.
[16] Chen K H, Wu J J, Chen L C, et al. Diamond Relat. Mater., 2000, 9: 1249--1256.
[17] Liew L A, Zhang W, Bright V M, et al. Sensors and Actuators A, 2001, 89: 64--70.
[18] 方容川, 常超, 牛晓滨, 等. 材料导报, 2001, 15 (1): 74--76.
[19] Gao Y, Wei J, Zhang D H, et al. Thin Solid Films, 2000, 377-378: 562--566.
[20] Wu J J, Wu C T, Liao Y C, et al. Thin Solid Films, 1999, 355-356: 417--422.
[21] Zhang D H, Gao Y, Wei J, et al. Thin Solid Films, 2000, 377-378: 607--610.
[22] Tenegal F, A. Gheorghiu de la Rocque, G. Dufour, et al. Journal of Electron Spectroscopy and Related Phenomena, 2000, 109: 241--248.
[23] Costa T M H, Gallas M R, Benvenutti E V, et al. J. NoC-Nryst. Solids, 1997, 220: 195--201.
[24] Fainer N I, Kosinova M L, Yurjev G S, et al. Nuclear Instru. and Method in Phys. Res. A, 2000, 448: 294--298.
[23] Gomez F J, Martinez J, Garrido J, et al. J. NoC-Nryst. Solids, 1995, 191: 164--173.

Silicon Carbon Nitride Films Grown by Hot-Filament Chemical Vapor Deposition

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