High-speed Deposition of Oriented TiNx Films by Laser Metalorganic Chemical Vapor Deposition

doi:10.3724/SP.J.1077.2010.00391

Abstract

Abstract: TiN_xfilms were prepared on Al2O3 substrates by laser chemical vapor deposition (LCVD). The effects of laser power (PL), pre-heatment temperature (T_pre) and total pressure in the main chamber (P_tot) on the orientation and deposition rate (Rdep) of TiNx films were investigated. The deposited TiNx films were characterized by Xray diffraction (XRD), atomic emission spectrometry (AES) and field emission scanning electron microscope (FESEM). The results showed that the composition in TiN_x films was uniform, and the orientation was relative to the T_pre, which changed from (111) to (200) orientation with increasing T_pre. The orientation was consistent with its microstructure. The Rdep of TiNx films increased with increasing P_L, showing a maximum (90μm/h) at P_L = 100W at a deposition area of about 300mm², which was higher than that of TiN_x films prepared by other methods.

Key words: TiN_x films, highspeed deposition, orientation, laser chemical vapor deposition (LCVD)

CLC Number:

TB43
TB34

GONG Yan-Sheng,TU Rong,GOTO Takashi. High-speed Deposition of Oriented TiN_x Films by Laser Metalorganic Chemical Vapor Deposition[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2010.00391.

References

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High-speed Deposition of Oriented TiN_x Films by Laser Metalorganic Chemical Vapor Deposition

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