Journal of Inorganic Materials

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Growth of CeO2:Bi12SiO20 Crystals in Multi-Position Furnace(Ⅱ)- Space Growth Experiment

ZHOU Yan-Fei1; WANG Jin-Chang1; TANG Lian-An1; CHEN Nuo-Fu2; CHEN Wan-Chun3   

  1. 1. Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China; 2. Institute of Semiconductors; Beijing 100083, China; 3. Institute of Physics, Chinese Academy of Sciences, Beijing 100080; China
  • Received:2003-03-07 Revised:2003-04-04 Published:2004-03-20 Online:2004-03-20

Abstract: Ce-doped Bi12SiO20 single crystal with size of φ10mm×40mm was successfully grown in space on board of the spacecraft Shenzhou No.3. The surface morphology of space-grown crystal is different from that of ground-grown crystal.The space- and ground-grown crystals were measured by X-ray rocking curves, absorption spectra and micro-Raman spectra. The results show that the quality of Ce-doped crystal grown in space is better than that of the ground-grown one. The effect of doping on optical properties of BSO grown in space is evient in comparison with the ground-grown crystal.

Key words: doped cerium bismuth silicon oxides (Ce:BSO), crystal growth, multi-position furnace, microgravity, Raman spectrum

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