Journal of Inorganic Materials

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Activation Energy for the Crystallization of the New Type AgInSbTe Phase Change Films

ZHANG Guang-Jun1, GU Dong-Hong1, LI Qing-Hui1, GAN Fu-Xi1, LIU Yin-Shi2   

  1. 1. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; 2. Chengdu Pioneer Materials, Inc. Chengdu 611731, China
  • Received:2003-12-04 Revised:2004-02-17 Published:2005-01-20 Online:2005-01-20

Abstract: A new type AgInSbTe phase change film was prepared by direct magnetron sputtering. X-ray diffraction (XRD) spectra of the film in as-deposited and heat-treated states show the film changed from amorphous
to crystalline states due to heat-treatment. By using differential scanning calorimetry (DSC) data of the amorphous film materials, measuring the peak temperature of crystallization at different heating
rates, the mol activation energies for crystallization and frequency factors were calculated. By judging from the mol activation energies, the new type AgInSbTe phase change film has a high value of activation
energies for crystallization and will be suitable to the high-speed phase change disks for the direct overwrite.

Key words: new type AgInSbtTe phase change films, crystallization kinetics, XRD, DSC

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