Growth and Scintillation Properties of Cerium-doped Lutetium Oxyorthosilicate(Lu2SiO5:Ce) Crystals

Abstract

Abstract: Cerium-doped lutetium oxyorthosilicate (LSO) crystal with the dimension of φ35mm×40mm
was grown by using the Czochralsky method. Due to cerium ion doping, its absorption edge shifts from 195nm of undoped LSO crystal to 380nm.
The intensities of ultraviolet excitation wavelength of LSO:Ce decrease by degrees of 380,332,319 and 216nm. The emission of LSO:Ce crystals has the characteristic of band emission
and the emission wavelength spans from 390nm to 560nm. The X-ray excited emission also has band characteristics with two peaks of 390 and 426nm.
These luminescence properties are related to the electronic transition of Ce³⁺ ion from its excited 5d levels to two split ground
state levels of ⁴f as well as the existence of two luminescence centers of Ce³⁺ ion in LSO lattice.

Key words: lutetium orthosilicate, crystal growth, emission, excitation

CLC Number:

O782

REN Guo-Hao,WANG Shao-Hua,LI Huan-Ying,LU Sheng. Growth and Scintillation Properties of Cerium-doped Lutetium Oxyorthosilicate(Lu₂SiO₅:Ce) Crystals[J]. Journal of Inorganic Materials.

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Growth and Scintillation Properties of Cerium-doped Lutetium Oxyorthosilicate(Lu₂SiO₅:Ce) Crystals

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